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BUK753R4-30B,127

Description
MOSFET N-CH 30V 75A TO220AB
CategoryDiscrete semiconductor    The transistor   
File Size210KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK753R4-30B,127 Overview

MOSFET N-CH 30V 75A TO220AB

BUK753R4-30B,127 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
Contacts3
Manufacturer packaging codeSOT78A
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)255 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
TO
-22
0A
B
BUK753R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C;
see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 12;
see
Figure 13
[1]
Min
-
-
Typ
-
-
Max
30
75
Unit
V
A
P
tot
total power dissipation
-
-
255
W
Static characteristics
R
DSon
drain-source on-state
resistance
-
2.9
3.4
mΩ

BUK753R4-30B,127 Related Products

BUK753R4-30B,127 934060026127
Description MOSFET N-CH 30V 75A TO220AB 198A, 30V, 0.0034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3
Maker NXP NXP
Reach Compliance Code unknown unknown
Configuration Single SINGLE WITH BUILT-IN DIODE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Base Number Matches 1 1
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