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BUK9535-55,127

Description
MOSFET N-CH 55V 34A TO220AB
Categorysemiconductor    Discrete semiconductor   
File Size53KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BUK9535-55,127 Overview

MOSFET N-CH 55V 34A TO220AB

BUK9535-55,127 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)55V
Current - Continuous Drain (Id) at 25°C34A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)5V
Rds On (maximum value) when different Id, Vgs35 milliohms @ 17A, 5V
Vgs (th) (maximum value) when different Id2V @ 1mA
Vgs (maximum value)±10V
Input capacitance (Ciss) at different Vds (maximum value)1400pF @ 25V
FET function-
Power dissipation (maximum)85W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220AB
Package/casingTO-220-3
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
BUK9535-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
MAX.
55
34
85
175
35
UNIT
V
A
W
˚C
mΩ
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
34
24
136
85
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
1.75
-
UNIT
K/W
K/W
April 1998
1
Rev 1.100
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