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IP4085CX4; IP4385CX4;
IP4386CX4; IP4387CX4
Integrated high-performance ESD protection diodes
Rev. 2 — 14 December 2012
Product data sheet
1. Product profile
1.1 General description
Integrated high-performance protection diodes protecting appliances against ElectroStatic
Discharge (ESD) of
30
kV, far exceeding IEC 61000-4-2 level 4 standard, overvoltage
and wrong polarity.
Each device includes one high-level ESD protection diode in a 4-channel 0.4 mm
(IP438xCX4) or 0.5 mm (IP4085CX4) pitch Wafer Level Chip-Size Package (WLCSP).
The anode and the cathode of ESD protection diode are each connected to two solder
balls.
:/
&6
3
1.2 Features and benefits
Single integrated high-performance ESD protection diode
Surge immunity according to IEC 61000-4-5 (8/20
s)
up to 60 A (IP4085CX4)
ESD protection of >30 kV contact discharge, far exceeding IEC 61000-4-2, level 4
Small 2
2 solder ball WLCSP package with 0.4 mm or 0.5 mm pitch
1.3 Applications
General-purpose ESD protection such as for charger interfaces in:
Mobile handsets
Portable devices
Wireless data systems
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD protection diodes
2. Pinning information
Table 1.
Pin
Pinning
Description
Simplified outline
bump A1
index area
1
2
Graphic symbol
A1
A2
A1 and A2 cathode
B1 and B2 anode
B1
B2
006aad220
A
B
008aaa236
transparent top view,
solder balls facing down
3. Ordering information
Table 2.
Ordering information
Package
Name
IP4085CX4/LF/P
IP4385CX4/LF
IP4386CX4/P
IP4387CX4/P
[1]
[2]
Size: 0.91
0.91
0.65 mm
Size: 0.76
0.76
0.61 mm
Type number
Description
wafer level chip-size package: 4 bumps (2
2)
[1]
wafer level chip-size package: 4 bumps (2
2)
[2]
Version
IP4085CX4/LF/P
IP4385CX4/LF
IP4386CX4/P
IP4387CX4/P
WLCSP4
IP4085_4385_4386_4387_CX4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 December 2012
2 of 18
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD protection diodes
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RWM
Parameter
reverse standoff voltage
Conditions
IP4085CX4; IP4386CX4
IP4385CX4
IP4387CX4
V
ESD
electrostatic discharge voltage
all pins to ground
contact discharge
air discharge
IEC 61000-4-2, level 4;
all pins to ground
contact discharge
air discharge
I
PP
peak pulse current
IEC 61000-4-5; t
p
= 8/20
s
IP4085CX4
IP4385CX4; IP4387CX4
IP4386CX4
I
FSM
non-repetitive peak forward
current
10 pulses; 1 pulse per
second
IP4085CX4; IP4386CX4;
t
p
= 2 ms
IP4085CX4; IP4386CX4;
t
p
= 5 ms
IP4085CX4; IP4386CX4;
t
p
= 100 ms
IP4385CX4; IP4387CX4;
t
p
= 2 ms
IP4385CX4; IP4387CX4;
t
p
= 5 ms
IP4385CX4; IP4387CX4;
t
p
= 100 ms
P
tot
total power dissipation
forward conducting
IP4085CX4
IP4385CX4; IP4386CX4;
IP4387CX4
T
stg
T
reflow(peak)
T
amb
[1]
[2]
[3]
[2]
[3]
[3]
[1]
[1]
Min
0.5
0.5
0.5
30
15
Max
+14
+5.5
+8.0
+30
+15
Unit
V
V
V
kV
kV
8
15
60
33
28
+8
+15
-
-
-
kV
kV
A
A
A
10
8.5
3.5
11
9
5
-
-
-
-
-
-
A
A
A
A
A
A
-
-
55
1
0.7
+150
260
+85
W
W
C
C
C
storage temperature
peak reflow temperature
ambient temperature
t
p
10 s
-
30
Device tested with over 1000 pulses of
30
kV contact discharges, according to the IEC 61000-4-2 model.
Severe self-heating demands a heat-dissipation optimized Printed-Circuit Board (PCB) to prevent the device from de-soldering. For
ambient temperature above 50
C,
the guaranteed life time is 48 hours at 0.7 W, assuming R
th
to be 130 K/W as specified in
Table 4.
Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.
IP4085_4385_4386_4387_CX4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 14 December 2012
3 of 18
NXP Semiconductors
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD protection diodes
5. Thermal characteristics
Table 4.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
on a 2-layer PCB
[1]
Typ
130
Unit
K/W
Depends on details of PCB layout.
6. Characteristics
Table 5.
Electrical characteristics
T
amb
= 25
C; unless otherwise specified.
Symbol
V
BR
Parameter
breakdown voltage
Conditions
I
R
= 15 mA
IP4085CX4; IP4386CX4
IP4385CX4
IP4387CX4
V
CL
clamping voltage
I
R
= 1 A; T
amb
85
C
at surge peak
pulse, according to IEC 61000-4-5
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
I
RM
reverse leakage current
IP4085CX4; IP4385CX4
V
R
= +5 V
IP4386CX4; V
R
= +14 V
IP4387CX4; V
R
= +8 V
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
V
F
forward voltage
I
F
= 850 mA
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
[1]
[2]
[1]
[2]
[1]
[2]
[1]
[2]
Min
16
7.0
10
Typ
-
-
-
Max
-
-
-
Unit
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
180
450
160
290
-
-
-
-
-
-
-
-
20
10
20
13
200
200
800
-
-
-
-
1.15
1.3
1.0
1.1
1.15
1.3
1.10
1.25
V
V
V
V
nA
nA
nA
pF
pF
pF
pF
V
V
V
V
V
V
V
V
[1]
[2]
T
amb
+25
C
30 C
T
amb
+85
C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
IP4085_4385_4386_4387_CX4
Product data sheet
Rev. 2 — 14 December 2012
4 of 18
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