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BGA2002,115

Description
MMIC AMPLIFIER SOT343R
CategoryWireless rf/communication    Radio frequency and microwave   
File Size152KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BGA2002,115 Overview

MMIC AMPLIFIER SOT343R

BGA2002,115 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Contacts4
Manufacturer packaging codeSOT343R
Reach Compliance Codecompliant
BGA2002
MMIC amplifier
Rev. 4 — 9 February 2011
Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN
double polysilicon transistor with integrated biasing for low voltage applications in a
plastic, 4-pin dual-emitter SOT343R package.
1.2 Features and benefits
Low current, low voltage
Very high power gain
Low noise figure
Integrated temperature compensated biasing
Supply and RF output pin combined
AEC-Q100 qualified, see
Section 8.1
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
High frequency oscillators
High frequency oscillators
Satellite televisions tuners (SATV)
High frequency oscillators
1.4 Quick reference data
Table 1.
V
CC
I
CC
MSG
NF
Quick reference data
Conditions
RF input AC coupled
V
bias
= 2.5 V; RF input AC coupled
Min
-
3
-
-
Typ
-
4.5
19.5
1.3
Max
4.5
6
-
-
Unit
V
mA
dBm
dBm
supply voltage
supply current
Symbol Parameter
maximum stable gain V
bias
= 2.5 V; f = 1.8 GHz;
T
amb
= 25
°C
noise figure
V
bias
= 2.5 V; f = 1.8 GHz;
Γ
S
=
Γ
opt
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