EVALUATION KIT AVAILABLE
MAX14783E
High-Speed 3.3V/5V RS-485/RS-422 Transceiver
with ±35kV HBM ESD Protection
General Description
The MAX14783E is a half-duplex RS-485/422 transceiver
that operates at either 3.3V or 5V rails with high ±35kV
ESD performance and up to 42Mbps data rate. The
device is optimized for high speeds over extended cable
runs while maximizing tolerance to noise.
The MAX14783E is available in 8-pin µMAX
®
, 8-pin SO,
and 8-pin TDFN-EP packages. The device in the TDFN-EP
package operates over the -40°C to +125°C temperature
range. The MAX14783E in the μMAX and SO packages
operates over the -40°C to +85°C and -40°C to +125°C
temperature ranges.
Benefits and Features
● Integrated Protection Increases Robustness
• High ESD Protection
±35kV HBM ESD per JEDEC JS-001-2012
±20kV Air Gap per IEC 61000-4-2
±12kV Contact ESD per IEC 61000-4-2
• Short-Circuit Protected Outputs
• True Fail-Safe Receiver Prevents False Transition
on Receiver Input Short or Open Events
• Hot-Swap Capability Eliminates False Transitions
During Power-Up or Hot Insertion
● 3V to 5.5V Supply Voltage Range
● High-Speed Data Rates up to 42Mbps
● -40°C to +125°C Operating Temperature
● Allows Up to 32 Transceivers on the Bus
● Low 10µA (max) Shutdown Current for Lower Power
Consumption
Applications
●
●
●
●
Motion Controllers
Field Bus Networks
Encoder Interfaces
Backplane Busses
Ordering Information
appears at end of data sheet.
Functional Diagram
V
CC
MAX14783E
RO
RE
R
B
SHUTDOWN
A
DE
DI
D
GND
µMAX is a registered trademark of Maxim Integrated Products, Inc,.
19-6734; Rev 1; 1/15
MAX14783E
High-Speed 3.3V/5V RS-485/RS-422 Transceiver
with ±35kV HBM ESD Protection
Absolute Maximum Ratings
(Voltages referenced to GND.)
V
CC
.....................................................................-0.3V
to +6.0V
RO ............................................................
-0.3V to (V
CC
+ 0.3V)
RE,
DE, DI
............................................................-0.3V
to +6.0V
A, B (V
CC
≥ 3.6V)
.............................................-8.0V to +13.0V
A, B (V
CC
< 3.6V)
.............................................-9.0V to +13.0V
Short-Circuit Duration (RO, A, B) to GND
.................Continuous
Operating Temperature Range
MAX14783EE_ ............................................... -40°C to +85°C
MAX14783EA_ ............................................. -40°C to +125°C
Junction Temperature
......................................................+150°C
Storage Temperature Range ............................
-65°C
to +150°C
Continuous Power Dissipation (T
A
= +70°C)
µMAX (derate at 4.8mW/°C above +70°C)
.................387mW
SO (derate at 7.6mW/°C above +70°C)
......................606mW
TDFN-EP (derate at 24.4mW/°C above +70°C)
........1951mW
Lead Temperature (soldering, 10s)
................................. +300ºC
Soldering Temperature (reflow)
......................................
+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
Junction-to-Case Thermal Resistance (θ
JC
)
8-pin µMAX ..................................................................42°C/W
8-pin SO ......................................................................38°C/W
8-pin TDFN-EP ..............................................................8°C/W
Junction-to-Ambient Thermal Resistance (θ
JA
)
8-pin µMAX ................................................................206°C/W
8-pin SO ....................................................................132°C/W
8-pin TDFN-EP ............................................................41°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
CC
= +3.0V to +5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise specified. Typical values are at V
CC
= +5V and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
POWER SUPPLY
Supply Voltage
Supply Current
Shutdown Supply Current
DRIVER
V
CC
= 4.5V, R
L
= 54Ω, Figure 1
Differential Driver Output
Change in Magnitude of Differential
Output Voltage
Driver Common-Mode Output
Voltage
Change in Magnitude of Common-
Mode Voltage
Single-Ended Driver Output High
Single-Ended Driver Output Low
Differential Output Capacitance
Driver Short-Circuit Output Current
VOD
VCC
I
CC
I
SHDN
SYMBOL
CONDITIONS
MIN
3.0
TYP
MAX
5.5
UNITS
V
mA
µA
DE = V
CC
,
RE
= GND, no load
DE = GND,
RE
= V
CC
2.1
2.0
1.5
-0.2
1.9
4
10
V
CC
= 3V, R
L
= 100Ω, Figure 1
V
CC
= 3V, R
L
= 54Ω, Figure 1
V
ΔV
OD
VOC
ΔV
OC
VOH
V
OL
COD
|I
OST|
R
L
= 54Ω or 100Ω, Figure 1 (Note 4)
R
L
= 54Ω or 100Ω, Figure 1
R
L
= 54Ω or 100Ω, Figure 1 (Note 4)
A or B output, I
A
or B
= -20mA
A or B output, I
A or
B
= 20mA
DE =
RE
= V
CC
, f = 4MHz
0 ≤ V
OUT
≤ +12V, output low
-7V ≤ V
OUT
≤ V
CC
, output high
0
V
CC
/ 2
+0.2
3
+0.2
V
V
V
V
-0.2
2.2
0.8
12
250
250
V
pF
mA
mA
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2
MAX14783E
High-Speed 3.3V/5V RS-485/RS-422 Transceiver
with ±35kV HBM ESD Protection
Electrical Characteristics (continued)
(V
CC
= +3.0V to +5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise specified. Typical values are at V
CC
= +5V and T
A
= +25°C.) (Notes 2, 3)
PARAMETER
RECEIVER
Input Current
Differential Input Capacitance
Receiver Differential Threshold
Voltage
Receiver Input Hysteresis
Receiver Input Resistance
Input Voltage High
Input Voltage Low
Input Hysteresis
Input Current
Input Impedance on First Transition
RO Output Voltage High
RO Output Voltage Low
Receiver Tri-State Output Current
Receiver Output Short-Circuit
Current
PROTECTION
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
IEC 61000-4-2 Air Gap Discharge to GND
ESD Protection on A and B Pins
ESD Protection, All Other Pins
IEC 61000-4-2 Contact Discharge to GND
Human Body Model
Human Body Model
TSHDN
VOHRO
V
OLRO
I
OZR
I
OSR
IA, B
C
A, B
VTH
ΔV
TH
R
IN
V
IH
V
IL
VHYS
IIN
SYMBOL
CONDITIONS
DE = GND, V
CC
= GND
or +5.5V
V
IN
= +12V
V
IN
= -7V
MIN
TYP
400
MAX
1000
UNITS
-800
300
12
µA
pF
Between A and B, DE = GND, f = 4MHz
-7V ≤ V
CM
≤ +12V
V
CM
= 0V
-7V ≤ V
CM
≤ +12V
DE, DI,
RE
DE, DI,
RE
DE, DI,
RE
DE, DI,
RE
DE,
RE
RE
= GND, I
RO
= -2mA,
(V
A
- V
B
) > 200mV
RE
= GND, I
RO
= 2mA,
(V
A
- V
B
) < -200mV
RE
= V
CC
, 0 ≤ V
RO
≤ V
CC
0 ≤ V
RO
≤ V
CC
1
V
CC
- 1.5
12
2.0
-200
-105
10
-10
mV
mV
kΩ
V
LOGIC INTERFACE (DI, DE,
RE,
RO)
0.8
50
±1
10
V
mV
µA
kΩ
V
0.4
±1
±110
V
µA
mA
Temperature rising
+160
15
±20
±12
±35
±2
°C
°C
kV
kV
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Maxim Integrated │
3
MAX14783E
High-Speed 3.3V/5V RS-485/RS-422 Transceiver
with ±35kV HBM ESD Protection
Switching Characteristics MAX14783E
(V
CC
= +3V to +5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise specified. Typical values are at V
CC
= +5V and T
A
= +25°C.) (Notes 2, 3, 5)
PARAMETER
DRIVER
Driver Propagation Delay
Driver Differential Output Rise or
Fall Time
Differential Driver Output Skew
|t
DPLH
- t
DPHL
|
t
DPLH
t
DPHL
t
HL
, t
LH
t
DSKEW
SYMBOL
CONDITIONS
R
L
= 54Ω, C
L
= 50pF,
Figures 2 and 3
R
L
= 54Ω, C
L
= 50pF,
Figures 2 and 3
R
L
= 54Ω, C
L
= 50pF,
Figures 2 and 3 (Note 6)
MAX14783EATA
MAX14783EEUA
MAX14783EESA
3.0V ≤ V
CC
≤
3.6V
MAX14783EAUA
3.0V ≤ V
CC
≤
5.5V
3.0V ≤ V
CC
≤
3.6V
MAX14783EASA
3.0V ≤ V
CC
≤
5.5V
MIN
TYP
MAX
20
20
7
3
42
30
40
42
UNITS
ns
ns
ns
Maximum Data Rate
DRMAX
Mbps
6
42
16
30
30
30
30
6
ns
ns
ns
ns
µs
Driver Enable to Output High
Driver Enable to Output Low
Driver Disable Time from Low
Driver Disable Time from High
Driver Enable from Shutdown to
Output High
tDZH
t
DZL
t
DLZ
tDHZ
t
DLZ(SHDN)
R
L
= 110Ω, C
L
= 50pF,
Figures 4 and 5 (Note 7)
R
L
= 110Ω, C
L
= 50pF,
Figures 4 and 5 (Note 7)
R
L
= 110Ω, C
L
= 50pF,
Figures 4 and 5
R
L
= 110Ω, C
L
= 50pF,
Figures 4 and 5
R
L
= 110Ω, C
L
= 15pF,
Figures 4 and 5 (Note 7)
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Maxim Integrated │
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MAX14783E
High-Speed 3.3V/5V RS-485/RS-422 Transceiver
with ±35kV HBM ESD Protection
Switching Characteristics MAX14783E (continued)
(V
CC
= +3V to +5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise specified. Typical values are at V
CC
= +5V and T
A
= +25°C.) (Notes 2, 3, 5)
PARAMETER
Driver Enable from Shutdown to
Output Low
Time to Shutdown
RECEIVER
Receiver Propagation Delay
Receiver Output Skew
Maximum Data Rate
Receiver Enable to Output High
Receiver Enable to Output Low
Receiver Disable Time from Low
Receiver Disable Time from High
Receiver Enable from Shutdown to
Output High
Receiver Enable from Shutdown to
Output Low
Time to Shutdown
t
RPLH
t
RPHL
t
RSKEW
DRMAX
tRZH
t
RZL
t
RLZ
tRHZ
t
RLZ(SHDN)
t
RHZ(SHDN)
tSHDN
SYMBOL
t
DHZ(SHDN)
tSHDN
CONDITIONS
R
L
= 110Ω, C
L
= 15pF,
Figures 4 and 5 (Note 7)
(Note 7)
MIN
TYP
MAX
6
UNITS
µs
ns
50
800
25
25
2
C
L
= 15pF, Figures 6 and 7
C
L
= 15pF, Figures 6 and 7
(Note 6)
42
R
L
= 1kΩ, C
L
= 15pF,
Figure 8 (Note 7)
R
L
= 1kΩ, C
L
= 15pF,
Figure 8 (Note 7)
R
L
= 1kΩ, C
L
= 15pF, Figure 8
R
L
= 1kΩ, C
L
= 15pF, Figure 8
R
L
= 1kΩ, C
L
= 15pF,
Figure 8 (Note 7)
R
L
= 1kΩ, C
L
= 15pF,
Figure 8 (Note 7)
(Note 7)
50
ns
ns
Mbps
30
30
30
30
6
6
800
ns
ns
ns
ns
µs
µs
ns
Note 2:
All devices 100% production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design.
Note 3:
All currents into the device are positive; all currents out of the device are negative. All voltages are referenced to ground,
unless otherwise noted.
Note 4:
ΔV
OD
and ΔV
OC
are the changes in V
OD
and V
OC
, respectively, when the DI input changes state.
Note 5:
Capacitive load includes test probe and fixture capacitance.
Note 6:
Guaranteed by design; not production tested.
Note 7:
The timing parameter refers to the driver or receiver enable delay, when the device has exited the initial hot-swap protect
state and is in normal operating mode.
Note 8:
Shutdown is enabled by driving
RE
high and DE low. The device is guaranteed to have entered shutdown after t
SHDN
has
elapsed.
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