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STK551U392AGEVB

Description
EVAL KIT 3 PHASE HYBRID INVERTER
CategoryDevelopment board/suite/development tools   
File Size724KB,15 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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STK551U392AGEVB Overview

EVAL KIT 3 PHASE HYBRID INVERTER

STK551U392AGEVB Parametric

Parameter NameAttribute value
typePower management
FunctionMotor controller/driver
Embeddedno
IC/parts usedSTK551U392A
Main attributes-
What's includedplate
Auxiliary properties-
STK551U392A-E
Intelligent Power Module (IPM)
600 V, 15 A
Overview
This “Inverter Power IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in dead time for shoot-thru protection
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over-current protection current is adjustable with the
external resistor, “RSD”
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings
at Tc = 25C
Parameter
Supply voltage
Collector-emitter voltage
Output current
Output peak current
Pre-driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
Operating case temperature
Tightening torque
Withstand voltage
Vis
Symbol
VCC
VCE
Io
Iop
VD1,2,3,4
VIN
VFAULT
Pd
Tj
Tstg
Tc
IPM case temperature
Case mounting screws
50 Hz sine wave AC 1 minute
*3
*4
V+ to V-, surge < 500 V
V+ to U,V,W or U,V,W to V-
V+, V-, U,V,W terminal current
V+, V-, U,V,W terminal current at Tc = 100C
V+, V-, U,V,W terminal current for a Pulse width of 1ms.
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
IGBT,FRD
*2
Conditions
*1
Ratings
450
600
±15
±8
±30
20
0.3
to VDD
0.3
to VDD
35
150
40
to +125
40
to +100
1.0
2000
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
www.onsemi.com
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between + and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 second.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
December 2016 - Rev. 2
Publication Order Number :
STK551U392A-E/D

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