MMA-44
45933H-02
4. – 5.9 GHz 2W High E
.4
z
Efficiency
Lin
near Power A
Amplifier
Fe
eatures:
:
•
•
•
•
•
•
•
30 dB Gain
G
33 dBm P-
1dB
m
OIP3 45 dBm
5
26.0 dB Linear Po @ 2.5% EVM (802.11 64QAM)
Bm
out
E
6
Fully Matched Input and Output for Easy Ca
M
t
ascade
Internal Bias Tee
e
Surface Mount Package
MTTF > 100 years @ 85ºC ambient
temperat
ure
•
escriptio
on:
De
The MMA-445933H-02 is a power amplifie with the Sta
e
p
er
ate-of-the-Art linear power
t
r-added-efficie
ency between 4.4 GHz
n
and 5.9 GHz fre
d
equency band Based on advanced robu HFET dev
d.
ust
vice technolog the lineari of this pow
gy,
ity
wer
am
mplifier is 26 dBm linear pow at 2.0% EVM and achieves an ACP better than -38 dBc. The modulation test
wer
E
PR
pat
ttern is 802.16x 64QAM. This linear pow amplifier also has high gain. Ideal a
T
wer
h
applications in
nclude the driver and
the output powe stage of WiMax and WLA infrastruc
e
er
AN
ctures and acc
cess points. It also can be used for PTP (Point-
t
P
To-
-Point) radio applications for this band.
f
Ty
ypical RF Performance
:
R
=25
50
Idq2=622 mA, Ta= ºC, Z0=5 ohm
Pa
arameter
Fre
equency Range
R
Ga (Typ / Min)
ain
M
Ga Flatness (Typ / Max)
ain
M
Input Return Loss
n
Ou
utput Retur Loss
rn
Ou
utput P1dB
B
OI
IP3
Po
out @ 2.5% EVM
%
Op
perating Cu
urrent Range
Vdd1=
7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V, Idq1=410mA
Units
s
MHz
dB
+/-dB
B
dB
dB
dBm
dBm
dBm
mA
°C
/W
W
°C
/W
W
T
Typical Data
a
4400-5900
29 / 33
2.5 / 4.5
10
7
33
45
26.0
1050
20
16
Th
hermal Res
sistance (D
Driver Stage
e)
Th
hermal Res
sistance (O
Output Stag
ge)
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
W
g
e
0
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.co m
1
Data contained herein is subject to change without no tice. All rights rreserved ©
a
Please visit MwT website
www.mwtinc.com
for informat ion on other MwT MMIC products.
e
w
Page 1 of 8, Updated July 2017
MMA-445933H-02
4
4.4 – 5.9 GHz 2W High Efficiency
z
Linear Power Amplifier
n
Ty
ypical RF Performance:
R
Idq
q2=620mA, Z0=50 ohm, Ta=25 ºC
Z
T
Vdd1=7.5V
V,Vdd2=7.5V, Vgg1=-0.8,
Vgg2=-0.8V,
Idq1=410mA ,
V,
A
MMA445933H
H-02 Gain Re
esponse
37
36
35
Gain (db)
34
33
32
31
30
29
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6
8
6.0
Freq
quency (GHz)
MMA44
459H02 Return Loss Re
esponse
0
-5
Return Loss (dB)
-1
10
-1
15
-2
20
-2
25
-3
30
-3
35
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0
4
Frequen (GHz)
ncy
P1dB vs Freq
quency MMA445933H02 V
Vdd=7.5, Vgg=-08, Idd1=4
416mA, Idd2=619mA
35.0
34.5
34.0
33.5
O IP3 (dBm)
46
4
45
4
44
4
43
4
42
4
50
5
49
4
48
4
47
4
OIP3 and Idd v Freqency Vdd1=Vdd2=7.5V, Vgg1=Vgg2=-0.8
vs
1100
1060
P1dB (dBm)
1020
Idd (mA)
33.0
32.5
32.0
31.5
980
940
41
4
31.0
4.40
4.65
4.90
5.15
Fre
equency (GHz)
5.40
5.65
5.90
40
4
Frequency (GH
Hz)
900
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
W
g
e
0
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.co m
1
Data contained herein is subject to change without no tice. All rights rreserved ©
a
Please visit MwT website
www.mwtinc.com
for informat ion on other MwT MMIC products.
e
w
Page 2 of 8, Updated July 2017
5.90
5.85
5.80
5.75
5 70
5.70
5.65
5.60
5.55
5.50
5.45
5.40
5.35
5.30
5 25
5.25
5.20
5.15
5.10
5.05
5.00
4.95
4.90
4.85
4 80
4.80
4.75
4.70
4.65
4.60
4.55
4.50
4.45
4.40
MMA-445933H-02
4
4.4 – 5.9 GHz 2W High Efficiency
z
Linear Power Amplifier
n
EVM vs Pout over Frequenc
E
cy
9
8
7
6
EVM (%)
5
4
3
2
1
0
8 9 10 11 12 1 14 15 16 17 18 19 20 21 22 2 24 25 26 27 28
13
6
9
23
6
Burs Power (d
st
dBm)
EVM
M4p4
EVM
M5p0
EVM
M5p5
EVM
M5p9
M
Maximum Rating
m
gs:
(Ta= 25
°
C)*
5
UNITS
V
V
V
V
mA
mA
mA
mA
W
dBm
ºC
ºC
ºC
A
ABSOLUTE M
MAXIMUM
10
10
-5
-5
500
0
750
0
10
10
9.0
0
+10
0
-40 to +85
17 5
-55 to 150
SY
YMBOL
PARAMETER
P
RS
Vdd1
Drain-Source Voltage Driver Stage
D
Vdd2
Drain-Sour Voltage Output Stage
rce
O
Vgg1
Gate-Source Voltage Driver Stage
D
Vgg2
Gate-Sour Voltage Output Stage
rce
O
Idq1
Drain Current Drive Stage
er
Idq2
Drain Current Outpu Stage
C
ut
Ig and Ig2
g1
Gate Curren
nt
Ip
Pinch-Off Curr
rent
Pdiss
DC Power Dissip
pation
Pin max
RF Input Pow
R
wer
Toper
Tch
Tstg
Operating Temperature
Channel Temperature
a
r
Storage Temperature
*Op
peration of this de
evice above any one of these parameters may ca
ause permanent damage.
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
W
g
e
0
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.co m
1
Data contained herein is subject to change without no tice. All rights rreserved ©
a
Please visit MwT website
www.mwtinc.com
for informat ion on other MwT MMIC products.
e
w
Page 3 of 8, Updated July 2017
MMA-445933H-02
4
4.4 – 5.9 GHz 2W High Efficiency
z
Linear Power Amplifier
n
Typical Scatterin Parammeters
:Vdd1=
7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V,
y
S
ng
Idq1=410mA,
Idq2=620mA, Z0=50 ohm, Ta=25º
S-parameeters Vd
1=Vdd2
=
d
=7.5, Vgg1
1=Vgg2=-0.8, Idd1=
=416mA, Id
dd2=620m
mA
f req
4.000
4.100
4.200
4.300
4.400
4.500
4.600
4.700
4.800
4.900
5.000
5.100
5.200
5.300
5.400
5.500
5.600
5.700
5.800
5.900
6.000
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
G...
magS11
0.645
0.583
0.507
0.405
0.303
0.230
0.174
0.126
0.109
0.127
0.154
0.189
0.253
0.316
0.357
0.399
0.435
0.451
0.458
0.462
0.465
AngS11
32.285
19.241
3.416
-13.491
-28.862
-43.280
-60.629
-77.940
-97.370
-120.196
-141.350
-153.388
-162.215
-175.950
169.576
158.603
147.247
137.700
131.897
128.232
123.778
magS21
m
43.519
50.770
56.887
58.229
60.835
58.592
56.340
57.163
54.402
51.026
61.098
49.493
57.434
59.113
50.821
50.854
45.402
38.623
35.013
31.307
28.815
AngS21
A
-99.628
-128.986
-160.542
171.005
137.356
113.084
89.105
60.090
43.453
18.963
-5.354
-24.139
-52.760
-79.554
-99.637
-137.348
-151.993
177.226
157.753
137.326
115.352
agS12
ma
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
2.8
849E-4
0.001
0.001
0.001
0.002
0.002
0.002
0.002
0.002
0.003
gS12
Ang
97.671
9
10
03.298
10
04.699
99.811
9
96.209
9
99.810
9
97.310
9
86.109
8
94.205
9
12
28.273
11
17.399
15
58.159
-17
71.236
-17
78.476
16
63.283
17
76.446
16
69.971
16
68.668
16
69.718
16
62.603
17
70.218
mag
gS22
0.072
0
0.029
0
0.039
0
0.085
0
0.141
0
0.175
0
0.221
0
0.265
0
0.291
0
0.326
0
0.386
0
0.423
0
0.443
0
0.463
0
0.437
0
0.366
0
0.294
0
0.224
0
0.152
0
0.084
0
0.051
0
AngS
S22
22
2.256
58
8.433
136
6.794
155
5.711
147
7.883
141.579
7.483
137
128
8.530
122
2.688
119
9.347
111.612
101.495
91.180
7.581
77
61.712
8.775
48
37
7.350
29
9.044
25
5.486
29
9.234
72
2.184
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
W
g
e
0
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.co m
1
Data contained herein is subject to change without no tice. All rights rreserved ©
a
Please visit MwT website
www.mwtinc.com
for informat ion on other MwT MMIC products.
e
w
Page 4 of 8, Updated July 2017
MMA-445933H-02
4
4.4 – 5.9 GHz 2W High Efficiency
z
Linear Power Amplifier
n
M
Mechanic Information:
cal
.15 MAX
X.
GAP. .003 TYP.
3
.250
.050 TY 8 PLCS.
YP.
.2
270
.024 TYP 10 PLCS.
P.
O
OUTPUT PAD
GROUND PA
AD
INPUT PA
AD
.040 TYP. 2 PLCS.
.43
30
IN
NPUT SIDE DO
OT
.050 T
TYP. 2 PLCS.
Pack
kage Outlin
ne
Pin Desi
ignation (To View)
op
Signal Name
N
Pin Number
n
Vgg1
10
GND
D
RF In
I
GND
D
Vdd
d1
9
8
7
6
Pi Number
in
1 Dot Top Left
D
t
2
3
4
5
Signal Nam
me
Vgg2
GND
RF Out
t
GND
Vdd2
All dimensi
A
ions are in inches
Figure 1 Fu
F
unctional D
Diagram
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
W
g
e
0
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.co m
1
Data contained herein is subject to change without no tice. All rights rreserved ©
a
Please visit MwT website
www.mwtinc.com
for informat ion on other MwT MMIC products.
e
w
Page 5 of 8, Updated July 2017
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