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SJPL-H6V

Description
DIODE GEN PURP 600V 2A SJP
Categorysemiconductor    Discrete semiconductor   
File Size305KB,9 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
Download Datasheet Parametric View All

SJPL-H6V Overview

DIODE GEN PURP 600V 2A SJP

SJPL-H6V Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)2A
Voltage at different If - Forward (Vf1.5V @ 2A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)50ns
Current at different Vr - Reverse leakage current50µA @ 600V
Capacitance at different Vr, F-
Installation typesurface mount
Package/casing2-SMD, J-lead
Supplier device packagingSJP
Operating Temperature - Junction-40°C ~ 150°C
N-Channel MOS FET
FKP250A
■Features
●Low
on-resistance
●Low
input capacitance
●Avalanche
energy capability guaranteed
June
, 2007
■Package---
FM100 (TO-3P Full Mold)
■Applications
●PDP
driving
●High
speed switching
■Equivalent
circuit
D (2)
G (1)
S (3)
■Absolute
maximum ratings
(Ta=25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Channel Temperature
Storage Temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
P
D
E
AS
*
2
I
AS
T
ch
T
stg
Rating
250
±30
±50A
±200A
85 (Tc=25°C)
400
50
150
-55
to 150
Unit
V
V
A
A
W
mJ
A
°C
°C
*1 PW≤100μs,duty cycle≤1%
*2 V
DD
=20V, L=300μH, I
Lp
=50A, unclamped, R
G
=50Ω, See Fig.1
Sanken Electric Co., Ltd.
http://www.sanken-ele.co.jp/en/
1/9
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