IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
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For the copyright notice at the bottom of each page (or elsewhere in the document, depending
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©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
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All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
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Thank you for your cooperation and understanding,
WeEn Semiconductors
BYC20DX-600P
Hyperfast power diode
9 May 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
•
•
Active PFC in air conditioner
High frequency switched-mode power supplies
Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
forward voltage
δ = 0.5; square-wave pulse;
Fig. 1;
Fig. 2
I
F
= 20 A; T
j
= 150 °C;
Fig. 5
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 6
Conditions
Min
-
-
Typ
-
-
Max
600
20
Unit
V
A
Static characteristics
V
F
t
rr
-
1.2
1.97
V
Dynamic characteristics
reverse recovery time
-
16
20
ns
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TO
-22
0F
NXP Semiconductors
BYC20DX-600P
Hyperfast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220F (SOD113A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYC20DX-600P
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220F "full pack"
Version
SOD113A
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYC20DX-600P
Type number
BYC20DX-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
DC
δ = 0.5; square-wave pulse;
Fig. 1;
Fig. 2
δ = 0.5; t
p
= 25 µs; square-wave pulse
Conditions
Min
-
-
-
-
-
Max
600
600
600
20
40
Unit
V
V
V
A
A
BYC20DX-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 May 2014
2/9
NXP Semiconductors
BYC20DX-600P
Hyperfast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 3
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 3
Min
-
-
-65
-
Max
250
275
175
175
aaa-010044
Unit
A
A
°C
°C
T
stg
T
j
60
P
tot
(W)
40
storage temperature
junction temperature
aaa-010043
δ=1
50
P
tot
(W)
40
2.2
2.8
4.0
20
a = 1.57
1.9
0.5
0.2
0.1
30
20
10
0
0
10
20
I
F(AV)
(A)
30
0
0
5
10
15
I
F(AV)
(A)
20
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
10
4
I
FSM
(A)
10
3
aaa-010046
10
2
I
F
I
FSM
t
p
t
10
10
-5
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values
BYC20DX-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 May 2014
3/9
NXP Semiconductors
BYC20DX-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-h)
Thermal characteristics
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient
10
Z
th(j-h)
(K/W)
1
Conditions
with heatsink compound;
Fig. 4
Min
-
Typ
-
Max
4
Unit
K/W
R
th(j-a)
in free air
-
55
-
K/W
aaa-010048
10
-1
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
t
p
10
-2
P
δ=
t
p
T
10
-3
t
T
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 4.
Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
f = 1 MHz; from cathode to external
heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
11. Characteristics
Table 8.
Symbol
V
F
BYC20DX-600P
Characteristics
Parameter
forward voltage
Conditions
I
F
= 20 A; T
j
= 25 °C;
Fig. 5
All information provided in this document is subject to legal disclaimers.
Min
-
Typ
2
Max
2.9
Unit
V
Static characteristics
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
9 May 2014
4/9
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