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38DN06ELEMXPSA1

Description
DIODE GEN PURP 600V 5095A
CategoryDiscrete semiconductor    diode   
File Size321KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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38DN06ELEMXPSA1 Overview

DIODE GEN PURP 600V 5095A

38DN06ELEMXPSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.99 V
JESD-30 codeO-XXSS-X2
Maximum non-repetitive peak forward current32300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current5095 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formSPECIAL SHAPE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current50000 µA
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Technische
Information /
technical information
Netz-Gleichrichterdiode
Rectifier Diode
38DN06
Key Parameters
V
DRM
/ V
RRM
I
FAVM
I
TSM
v
T0
r
T
R
thJC
Diameter
Weight
600 V
4550 A (T
C
= 100 °C)
37400 A =55°C)
3570A (T
C
0,7 V
0,064 mΩ
0,124 K/W
38 mm
60 g
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Merkmale
Hohe Lastwechelfestigkeit
Features
High power cycling capability
Typische Anwendungen
Widerstandsschweissen
Gleichrichter für Galvanik
Typical Applications
Resistance welding
Recitifiers for galvanic applications
www.ifbip.com
support@infineon-bip.com
Date of publication: 2011-12-22
Revision: 3.1
Seite/page
1/8

38DN06ELEMXPSA1 Related Products

38DN06ELEMXPSA1 38DN06 38DN06ELEMHOSA1
Description DIODE GEN PURP 600V 5095A 3885 A, 600 V, SILICON, RECTIFIER DIODE Rectifier Diode, 1 Phase, 1 Element, 5095A, 600V V(RRM), Silicon,
Reach Compliance Code compliant - compliant
ECCN code EAR99 - EAR99
application GENERAL PURPOSE - GENERAL PURPOSE
Configuration SINGLE - SINGLE
Diode component materials SILICON - SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 0.99 V - 0.99 V
JESD-30 code O-XXSS-X2 - O-XXSS-X2
Maximum non-repetitive peak forward current 32300 A - 32300 A
Number of components 1 - 1
Phase 1 - 1
Number of terminals 2 - 2
Maximum operating temperature 180 °C - 180 °C
Minimum operating temperature -40 °C - -40 °C
Maximum output current 5095 A - 5095 A
Package body material UNSPECIFIED - UNSPECIFIED
Package shape ROUND - ROUND
Package form SPECIAL SHAPE - SPECIAL SHAPE
Maximum repetitive peak reverse voltage 600 V - 600 V
Maximum reverse current 50000 µA - 50000 µA
surface mount NO - NO
Terminal form UNSPECIFIED - UNSPECIFIED
Terminal location UNSPECIFIED - UNSPECIFIED
Base Number Matches 1 - 1

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