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MALM062H0L

Description
TVS DIODE 4V SSMINI5-F1
CategoryCircuit protection   
File Size471KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MALM062H0L Overview

TVS DIODE 4V SSMINI5-F1

MALM062H0L Parametric

Parameter NameAttribute value
typeZina
One way channel4
Voltage - Reverse OFF (Typical)4V
Voltage - Breakdown (minimum)5.8V
电压 - 箝位(最大值)@ Ipp-
Current - Peak Pulse (10/1000µs)-
Power - Peak Pulse-
Power line protectionnone
applicationUniversal
Capacitance at different frequencies55pF @ 1MHz
Operating temperature-
Installation typesurface mount
Package/casingSOT-665
Supplier device packagingSS mini type 5-F1
This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MALM062H
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD:
±30
kV
Four elements anode-common type
1.60
±0.05
1.20
±0.05
1.60
±0.05
1.00
±0.05
Unit: mm
0.6
−0.03
+0.05
5
4
1.20
±0.05
1.60
±0.05
(0.15)
M
ain
Di
sc te
on na
tin nc
ue e/
d
Parameter
Symbol
P
D
T
j
Rating
150
150
Unit
°C
°C
Total power dissipation
*
1
Storage temperature
mW
1
Absolute Maximum Ratings
T
a
=
25°C
2
3
0.20
±0.05
0.10
±0.03
T
stg
–55 to +150
±30
Electrostatic discharge
*
2
ESD
Note) *
1
: P
D
=
150
mW achieved with a printed circuit board.
*
2
: Test method: IEC61000-4-2
(C =
150
pF, R =
330
Ω,
Contact discharge:
10
times)
on
Parameter
Symbol
V
BR
I
R
C
t
tin
ue
Electrical Characteristics
T
a
=
25°C±3°C
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Junction temperature
kV
1: Cathode 1
2: Anode 1, 2, 3, 4
3: Cathode 2
4: Cathode 3
5: Cathode 4
0
0.01
SSMini5-F1 Package
Marking Symbol:
6.2E
Internal Connection
5
4
di
1
2
3
Conditions
Min
5.8
Typ
6.2
55
Max
6.6
1.0
Unit
V
µA
pF
isc
Breakdown voltage
*
I
R
=
1
mA
2.
The temperature must be controlled
25°C
for V
BR
mesurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25°C)
3.
*: V
BR
guaranted
20
ms after current flow.
Ma
int
en
Note)
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
an
Terminal capacitance
ce
Reverse current
V
R
=
4.0
V
/D
V
R
=
0
V, f =
1
MHz
Pl
Publication date: September
2005
SKE00025AED
1

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Description TVS DIODE 4V SSMINI5-F1 Zener Diode, 0.15W, Silicon, Unidirectional, SSMINI5-F3, 5 PIN

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