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2SC4562GRL

Description
TRANS NPN 50VCEO 50MA SMINI-3
Categorysemiconductor    Discrete semiconductor   
File Size277KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SC4562GRL Overview

TRANS NPN 50VCEO 50MA SMINI-3

2SC4562GRL Parametric

Parameter NameAttribute value
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)50V
Frequency - Transition250MHz
Noise figure (dB, typical values ​​at different f)-
Gain-
Power - Max150mW
DC current gain (hFE) at different Ic, Vce (minimum value)250 @ 2mA,10V
Current - Collector (Ic) (Maximum)50mA
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSC-85
Supplier device packagingS mini 3-F2
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
h
FE
f
T
V
EBO
Collector-base voltage (Emitter open)
sc
on
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Di
Collector-base cutoff current (Emitter open)
na
nc
e/
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
te
Collector-emitter saturation voltage
ain
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
200 to 400
R
250 to 500
Publication date: May 2007
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Rating
50
50
5
Unit
V
V
V
50
mA
°C
150
150
mW
°C
T
stg
−55
to
+150
Conditions
Min
50
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
50
5
V
V
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
0.1
µA
µA
V
100
V
CE
=
10 V, I
C
=
2 mA
I
C
=
10 mA, I
B
=
1 mA
200
500
V
CE(sat)
C
ob
0.06
250
1.5
0.30
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
MHz
pF
SJC00366AED
M
M
Di ain
sc te
on na
tin nc
ue e/
d
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
Code
SMini3-F2
Marking Symbol: AM
Pin Name
1: Base
2: Emitter
3: Collector
1

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