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BC847CQAZ

Description
TRANS NPN 45V 0.1A SOT1215
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BC847CQAZ Overview

TRANS NPN 45V 0.1A SOT1215

BC847CQAZ Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic400mV @ 5mA,100mA
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)420 @ 2mA,5V
Power - Max280mW
Frequency - Transition100MHz
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casing3-XDFN Exposed Pad
Supplier device packagingDFN1010D-3
BC847XQA series
45 V, 100 mA NPN general-purpose transistors
Rev. 1 — 26 August 2015
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215)
Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Table 1.
Product overview
Package
Nexperia
BC847AQA
BC847BQA
BC847CQA
DFN1010D-3
(SOT1215)
JEITA
-
JEDEC
-
BC857AQA
BC857BQA
BC857CQA
PNP complement
Type number
1.2 Features and benefits
General-purpose transistors
Three current gain selections
Low package height of 0.37 mm
Suitable for Automatic Optical Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
Mobile applications
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
CEO
I
C
h
FE
Parameter
collector-emitter voltage
collector current
DC current gain
BC847AQA
BC847BQA
BC847CQA
V
CE
= 5 V; I
C
= 2 mA
110
200
420
-
-
-
220
450
800
Conditions
open base
Min
-
-
Typ
-
-
Max
45
100
Unit
V
mA

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