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2SC5087R(TE85L,F)

Description
TRANS RF NPN 12V 1MHZ SMQ
CategoryDiscrete semiconductor    The transistor   
File Size112KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SC5087R(TE85L,F) Overview

TRANS RF NPN 12V 1MHZ SMQ

2SC5087R(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.08 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature125 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)6000 MHz
Base Number Matches1
2SC5087R
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087R
VHF to UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S
21e
| = 13.5dB (f = 1 GHz)
2
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
Rating
20
12
3
40
80
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
1.Base(B)
2.Emitter1(E1)
3.Collector(C)
4.Emitter(E2)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
SMQ
JEDEC
JEITA
TOSHIBA
Weight: 12 mg (typ.)
Microwave Characteristics
(Ta
=
25°C)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
f
T
⎪S
21e
(1)
⎪S
21e
(2)
NF
2
2
Condition
V
CE
= 10 V, I
C
= 30 mA
V
CE
= 5 V, I
C
= 20 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 30 mA, f = 1 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
Min
6
11
Typ.
8
12.5
13.5
1.1
Max
2
Unit
GHz
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Symbol
I
CBO
I
EBO
h
FE
C
ob
C
re
Condition
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
10 V, I
C
=
20 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz(Note 1)
Min
120
Typ.
1.1
0.65
Max
1
1
240
1.6
1
Unit
μA
μA
pF
pF
Note 1: C
re
is measured with a three-terminal method using a capacitance bridge.
Start of commercial production
2005-05
1
2014-03-01

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