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DTA114TUA-TP

Description
TRANS PREBIAS PNP 200MW SOT323
Categorysemiconductor    Discrete semiconductor   
File Size225KB,3 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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DTA114TUA-TP Overview

TRANS PREBIAS PNP 200MW SOT323

DTA114TUA-TP Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)10 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 1mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 1mA,10mA
Current - collector cutoff (maximum)500nA(ICBO)
Frequency - Transition250MHz
Power - Max200mW
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingSOT-323
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
DTA114TUA
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making
device design easy
Halogen
free available upon request by adding suffix "-HF"
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
PNP Digital Transistor
SOT-323
A
D
3
Absolute Maximum Ratings
Value
-50
-50
-5
-100
200
-55~150
-55~150
K
Unit
V
V
V
mA
mW
G
1
F
E
2
B
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature Range
Storage Temperature Range
1: Base
2: Emitter
3: Collector
H
J
DIMENSIONS
Electrical Characteristics
Sym
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
Parameter
Collector-Base Breakdown Voltage
(I
C
=-50µA, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=-1mA, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=-50µA, I
C
=0)
Collector Cut-off Current
(V
CB
=-50V, I
E
=0)
Emitter Cut-off Current
(V
EB
=-4V, I
C
=0)
DC Current Gain
(V
CE
=-5V, I
C
=-1mA)
Collector-Emitter Saturation Voltage
(I
C
=-10mA, I
B
=-1mA)
Input Resistor
Transition Frequency
(V
CE
=-10V, I
C
=-5mA, f=100MHz)
Min
-50
-50
-5
---
---
100
---
7
---
Typ
---
---
---
---
---
250
---
10
250
Max
---
---
---
-0.5
-0.5
600
-0.3
13
---
Unit
V
V
V
µA
µA
---
V
K
MHz
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
NOTE
Suggested Solder
Pad Layout
0.70
0.90
1.90
mm
*Marking: 94
0.65
0.65
www.mccsemi.com
Revision: C
1
of
3
2013/09/24

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