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RN1905,LF(CT

Description
TRANS 2NPN PREBIAS 0.2W US6
Categorysemiconductor    Discrete semiconductor   
File Size461KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

RN1905,LF(CT Overview

TRANS 2NPN PREBIAS 0.2W US6

RN1905,LF(CT Parametric

Parameter NameAttribute value
Transistor type2 NPN pre-biased (dual)
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)2.2 kilohms
Resistor - Emitter Base (R2)47 kiloohms
DC current gain (hFE) at different Ic, Vce (minimum value)80 @ 10mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 250µA,5mA
Current - collector cutoff (maximum)500nA
Frequency - Transition250MHz
Power - Max200mW
Installation typesurface mount
Package/casing6-TSSOP,SC-88,SOT-363
Supplier device packagingUS6
RN1901~RN1906
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1901, RN1902, RN1903
RN1904, RN1905, RN1906
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2901 to RN2906
Equivalent Circuit and Bias Resistor Values
Type No.
RN1901
RN1902
RN1903
RN1904
RN1905
RN1906
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
US6
JEDEC
JEITA
TOSHIBA
2-2J1A
Weight: 6.8mg(typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1901 to 1906
RN1901 to 1906
RN1901 to 1904
RN1905, 1906
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1990-12
1
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