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BUK6218-40C,118

Description
MOSFET N-CH 40V 42A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size751KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK6218-40C,118 Overview

MOSFET N-CH 40V 42A DPAK

BUK6218-40C,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeDPAK
package instructionSC-63, DPAK-3/2
Contacts3
Manufacturer packaging codeSOT428
Reach Compliance Codenot_compliant
Is SamacsysN
Base Number Matches1
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoids
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
40
42
60
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 10 A;
T
mb
= 25 °C; see
Figure 11
-
13.5 16
mΩ
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