BC807RA
14 September 2018
45 V, 500 mA PNP/PNP general-purpose double transistors
Product data sheet
1. General description
PNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)
Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: BC817RA
NPN/PNP complement: BC817RAPN
2. Features and benefits
•
•
•
•
Reduces component count
Reduces pick and place costs
Low package height of 0.5 mm
AEC-Q101 qualified
3. Applications
•
•
General-purpose switching and amplification
Mobile applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
V
CEO
I
C
I
CM
h
FE
collector-emitter
voltage
collector current
peak collector current
DC current gain
single pulse; t
p
≤ 1 ms
V
CE
= -1 V; I
C
= -100 mA; T
amb
= 25 °C
V
CE
= -1 V; I
C
= -500 mA; T
amb
= 25 °C
[1]
Pulse test: t
p
≤ 300 µs; δ ≤ 0.02
Conditions
open base
Min
-
-
-
160
[1]
40
Typ
-
-
-
-
-
Max
-45
-500
-1
400
-
Unit
V
mA
A
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
2
3
4
5
6
7
8
E1
B1
C2
E2
B2
C1
C1
C2
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
collector TR1
collector TR2
Transparent top view
1
2
3
8
7
6
5
4
Simplified outline
Graphic symbol
6
5
4
TR2
TR1
1
2
sym018
3
DFN1412-6
(SOT1268)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BC807RA
DFN1412-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body: 1.4 mm x 1.2 mm x 0.47 mm
Version
SOT1268
7. Marking
Table 4. Marking codes
Type number
BC807RA
Marking code
A9
BC807RA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
14 September 2018
2 / 11
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
open emitter
open base
open collector
single pulse; t
p
≤ 1 ms
T
amb
≤ 25 °C
T
amb
≤ 25 °C
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-55
-65
Max
-50
-45
-5
-500
-1
-200
350
500
150
150
150
Unit
V
V
V
mA
A
mA
mW
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin plated and standard footprint.
600
P
tot
(mW)
400
aaa-025824
200
0
-75
-25
25
75
125
175
T
amb
(°C)
FR4 PCB, standard footprint
Fig. 1.
Power derating curve
BC807RA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
14 September 2018
3 / 11
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
R
th(j-a)
Per device
R
th(j-a)
[1]
Conditions
[1]
Min
-
Typ
-
Max
358
Unit
K/W
thermal resistance from in free air
junction to ambient
thermal resistance from in free air
junction to ambient
[1]
-
-
250
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
0.20
0.10
0.05
10
0.01
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
2
10
3
0.02
duty cycle = 1
0.75
0.50
0.33
aaa-025825
1
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BC807RA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
14 September 2018
4 / 11
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
[1]
Conditions
V
CB
= -20 V; I
E
= 0 A; T
amb
= 25 °C
V
CB
= -20 V; I
E
= 0 A; T
j
= 150 °C
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
V
CE
= -1 V; I
C
= -100 mA; T
amb
= 25 °C
V
CE
= -1 V; I
C
= -500 mA; T
amb
= 25 °C
[1]
I
C
= -500 mA; I
B
= -50 mA; T
amb
= 25 °C
[1]
V
CE
= -1 V; I
C
= -500 mA; T
amb
= 25 °C
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
[1]
Min
-
-
-
160
40
-
-
-
80
Typ
-
-
-
-
-
-
-
6
-
Max
-100
-5
-100
400
-
-700
-1.2
-
-
Unit
nA
µA
nA
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
mV
V
pF
MHz
Pulse test: t
p
≤ 300 µs; δ ≤ 0.02
600
h
FE
400
(1)
006aaa120
-1.2
I
C
(A)
-0.8
aaa-007611
I
B
(mA) = -13
-11.7
-10.4
-7.8
-5.2
-9.1
-6.5
(2)
-3.9
-0.4
-2.6
-1.3
200
(3)
0
- 10
- 1
-1
- 10
- 10
2
I
C
(mA)
- 10
3
0
0
-1
-2
-3
-4
-5
V
CE
(V)
V
CE
= -1 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3.
DC current gain as a function of collector
current; typical values
T
amb
= 25 °C
Fig. 4.
Collector current as a function of collector-
emitter voltage; typical values
BC807RA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
14 September 2018
5 / 11
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