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S1GM RSG

Description
DIODE GEN PURP 400V 1A MICRO SMA
Categorysemiconductor    Discrete semiconductor   
File Size510KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

S1GM RSG Overview

DIODE GEN PURP 400V 1A MICRO SMA

S1GM RSG Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.1V @ 1A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)780ns
Current at different Vr - Reverse leakage current1µA @ 400V
Capacitance at different Vr, F5pF @ 4V,1MHz
Installation typesurface mount
Package/casing2-SMD, flat leads
Supplier device packagingMicro SMA
Operating Temperature - Junction-55°C ~ 175°C
S1GM - S1JM
Taiwan Semiconductor
1A, 400V - 600V Surface Mount Rectifier
FEATURES
AEC-Q101 qualified
Ideal for automated placement
Low forward voltage drop
Glass passivated chip junction
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
1
400 - 600
20
175
Micro SMA
UNIT
A
V
A
°C
APPLICATIONS
Converter
Free wheeling
LED lighting
Adapters
MECHANICAL DATA
Case: Micro SMA
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.006 g (approximately)
Micro SMA
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on
rated load per diode
Junction temperature
Storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
S1GM
A5
400
1
20
- 55 to +175
- 55 to +175
S1JM
A7
600
UNIT
V
A
A
°C
°C
1
Version:G1805
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