
MOSFET N-CH 50V 220MA SOT23
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) at 25°C | 220mA(Ta) |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V,10V |
| Rds On (maximum value) when different Id, Vgs | 3.5 ohms @ 220mA, 10V |
| Vgs (th) (maximum value) when different Id | 1.5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum value) | 2.4nC @ 10V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 27pF @ 25V |
| FET function | - |
| Power dissipation (maximum) | 360mW(Ta) |
| Operating temperature | -55°C ~ 150°C(TJ) |
| Installation type | surface mount |
| Supplier device packaging | SOT-23 |
| Package/casing | TO-236-3,SC-59,SOT-23-3 |