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BSS138-F085

Description
MOSFET N-CH 50V 220MA SOT23
Categorysemiconductor    Discrete semiconductor   
File Size150KB,1 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BSS138-F085 Overview

MOSFET N-CH 50V 220MA SOT23

BSS138-F085 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)50V
Current - Continuous Drain (Id) at 25°C220mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs3.5 ohms @ 220mA, 10V
Vgs (th) (maximum value) when different Id1.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)2.4nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)27pF @ 25V
FET function-
Power dissipation (maximum)360mW(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingSOT-23
Package/casingTO-236-3,SC-59,SOT-23-3
Product Overview
BSS138_F085: N-Channel Logic Level Enhancement Mode Field Effect Transistor
60V, 220mA, 3.5Ω
For complete documentation, see the data sheet.
These N-Channel enhancement mode field effect tran sistors are produced using Fairchild’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching
perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control,
power MOSFET gate drivers, and otherswitching applications.
Features
• 0.22 A, 50 V
 R
DS(ON)
= 3.5Ω @ V
GS
= 10 V
 R
DS(ON)
= 6.0Ω @ V
GS
= 4.5 V
• High density cell design for extremely low R
DS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount package
Applications
General Low Voltage and Low Current Application
Small Servo Motor Control
Power MOSFET Gate Drivers
General Switching Applications
For more information please contact your local sales support at www.onsemi.com.
Created on: 10/7/2018
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