Z0103NN
4Q Triac
15 September 2018
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable
plastic package intended for applications requiring direct interfacing to logic level ICs and low
power gate drivers.
2. Features and benefits
•
•
•
•
•
•
•
Direct interfacing to logic level ICs
Direct interfacing to low power gate drive circuits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate in four quadrants
3. Applications
•
•
•
•
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
sp
≤ 105 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
-
-
Typ
-
-
-
-
-
-
-
Max
800
1
8
8.5
125
3
3
Unit
V
A
A
A
°C
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
Z0103NN
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 9
Min
-
-
-
-
10
Typ
-
-
-
1.3
-
Max
3
5
7
1.6
-
Unit
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 11
I
T
= 1.4 A; T
j
= 25 °C;
Fig. 12
V
DM
= 536 V; T
j
= 110 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 14
V
D
= 400 V; T
j
= 110 °C; dI
com
/
dt = 0.44 A/ms; gate open circuit
Dynamic characteristics
dV
com
/dt
0.5
-
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
main terminal 2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3. Ordering information
Type number
Z0103NN
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Z0103NN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
2 / 14
WeEn Semiconductors
Z0103NN
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
2
Conditions
Min
-
Max
800
1
8
8.5
0.32
50
50
50
20
1
2
0.1
150
125
003a a c270
Unit
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
full sine wave; T
sp
≤ 105 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
=
20
mA;
T2+ G+
I
G
=
20 mA; T2+ G-
I
G
=
20 mA; T2- G-
I
G
=
20 mA; T2- G+
-
-
-
-
-
-
-
-
-
-
I t
dI
T
/dt
2
I
GM
P
GM
P
G(AV)
T
stg
T
j
8
I
T(RMS)
(A)
6
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
003aac269
over any 20 ms period
-
-40
-
1.2
I
T(RMS)
(A)
0.8
4
0.4
2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
s p
(°C)
f = 50 Hz; T
sp
= 105 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
Z0103NN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
3 / 14
WeEn Semiconductors
Z0103NN
4Q Triac
2.0
P
tot
(W)
1.6
003aac259
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
α
α = 180°
120
°
90°
60°
30
°
1.2
α
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
1
I
T(RMS )
(A)
1.2
α
= conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
10
003aad318
8
6
4
IT
ITSM
t
1/f
2
0
Tj(init) = 25
°C
max
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
Z0103NN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
4 / 14
WeEn Semiconductors
Z0103NN
4Q Triac
10
3
I
TS M
(A)
10
2
(1)
(2)
003a a d319
I
T
ITSM
t
t
p
Tj(init) = 25
°C
max
10
1
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
Z0103NN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
15 September 2018
5 / 14
京公网安备 11010802033920号
EEWORLD
