EEWORLDEEWORLDEEWORLD

Part Number

Search

VS-MURB820HM3

Description
DIODE GEN PURP 200V 8A TO263
CategoryDiscrete semiconductor    diode   
File Size226KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

VS-MURB820HM3 Online Shopping

Suppliers Part Number Price MOQ In stock  
VS-MURB820HM3 - - View Buy Now

VS-MURB820HM3 Overview

DIODE GEN PURP 200V 8A TO263

VS-MURB820HM3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionR-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time22 weeks
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
VS-MURB820HM3, VS-MURB820-1HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
TO-263AB
(D
2
PAK)
TO-262AA
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified, meets JESD-201
class 1A thin whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Base
cathode
2
2
1
N/C
3
Anode
1
N/C
3
Anode
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-MURB820HM3
VS-MURB820-1HM3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Diode variation
TO-263AB (D
2
PAK), TO-262AA
8A
200 V
0.75 V
35 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 150 °C
Total device, rated V
R
, T
C
= 150 °C
TEST CONDITIONS
MAX.
200
8
100
16
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.92
0.75
-
-
25
8.0
MAX.
-
0.975
0.895
5
250
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 08-Oct-15
Document Number: 95902
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-MURB820HM3 Related Products

VS-MURB820HM3 VS-MURB820-1HM3
Description DIODE GEN PURP 200V 8A TO263 DIODE GEN PURP 200V 8A TO-262
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Factory Lead Time 22 weeks 22 weeks
Other features FREE WHEELING DIODE, LOW LEAKAGE CURRENT FREE WHEELING DIODE, LOW LEAKAGE CURRENT
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.975 V 0.975 V
JEDEC-95 code TO-263AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSIP-T3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 1 1
Phase 1 1
Number of terminals 2 3
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Guideline AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 200 V 200 V
Maximum reverse current 5 µA 5 µA
Maximum reverse recovery time 0.035 µs 0.035 µs
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Crystal Oscillator Storage and Stopping Analysis
Many people know that crystal oscillators are a kind of frequency element of electronic components . They are made of precision cutting and grinding with very low power loss, and then plated with elec...
zkj2014 Integrated technical exchanges
Analysis of the causes of bloating and explosion of lithium batteries
When lithium metal is exposed to air, it will produce a violent oxidation reaction with oxygen and explode. In order to improve safety and voltage, scientists have invented materials such as graphite ...
qwqwqw2088 Analogue and Mixed Signal
One week evaluation information delivered~
The new week's evaluation information has been delivered, come and have a look~Evaluation activities during the application period: 1. A multi-field crossover player, GigaDevice GD32450I-EVAL free eva...
okhxyyo Special Edition for Assessment Centres
The touch screen and network card do not work after PXA270 wakes up
Dear heroes: My test platform: PXA270+WINCE5.0. After the system wakes up from sleep mode, I found several problems: 1. The touch screen does not respond to clicks, but the keyboard responds. 2. The n...
卖蛋筒 Embedded System
The key values of the 3*3 matrix table lookup are correct when the simulation is scanned, but incorrect when running at full speed
Hello everyone, I have encountered the following problems using Atmel AVR mega32 microcontroller, please advise. 1. To scan the 3*3 matrix buttons, first scan and then look up the table to get the but...
szkenvin Microchip MCU
msp430g2331 ds1302 clock module
I have a ds1302 clock module and some digital tubes, so I tried to make a clock. Of course, it is handmade, so it is not as good-looking as the ones bought on Taobao. Of course, the cost of making it ...
火辣西米秀 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2877  761  1814  552  1632  58  16  37  12  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号