Hermetic Infrared Emitting Diode
OP230 Series
Features:
Focused and non‐focused op cal light pa ern
Enhanced temperature range
TO‐46 herme cally sealed package
Mechanically and spectrally matched to other Optek devices
Choice of power ranges
Choice of narrow or wide irradiance pa ern
Descrip on:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emi ng diode, mounted in a herme c metal TO‐
46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same
forward current.
Each
OP231, OP232, OP233, OP234
and
OP235
device is lensed to provide a narrow beam angle (18°) between half power
points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam
angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt
applica ons in conjunc on with the OP800 or OP598 series photosensors.
The OP231 series is mechanically and spectrally
matched to OP800, OP593 and OP598 phototransistors.
Each
OP231W, OP232W, OP233W, OP234W
and
OP235W
device is lensed to provide a wide beam angle (50°) between half
power points. The 890 nm wavelength closely matches the spectral response of silicon photo‐transistors, while the wide
beam angle provides rela vely even illumina on over a large area.
The OP231W is mechanically and spectrally matched to
the OP800WSL and OP830SL series devices.
Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data.
Custom electrical, wire and cabling and connectors are
available. Contact your local representa ve or OPTEK for
more informa on
.
Ordering Informa on
Output Power
2
LED Peak
(mW/cm )
Total Beam
Wavelength
Min / Max
Angle
1.5 / NA
2.0 / 6.0
890 nm
3.0 / NA
18°
5.0 / NA
850 nm
6.0 / NA
1.5 / NA
890 nm
3.5 / 7.0
5.0 / NA
50°
5.0 / NA
850 nm
6.0 / NA
Applica ons:
Non‐contact reflec ve object sensor
Assembly line automa on
Machine automa on
Machine safety
End of travel sensor
Door sensor
Part
Number
OP231
OP232
OP233
OP234
OP235
OP231W
OP232W
OP233W
OP234W
OP235W
Lead
Length
0.50"
General Note
TT Electronics reserves the right to make changes in product specification without notice or
liability. All information is subject to TT Electronics’ own data and is considered accurate at
time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
07/2016
Page 1
Hermetic Infrared Emitting Diode
OP230 Series
OP231, OP232, OP233, OP234, OP235
Anode
Cathode
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
OP231W, OP232W, OP233W, OP234W, OP235W
Anode
Cathode
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
Pin #
1
2
LED
Anode
Cathode
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
‐65
o
C to +150
o
C
‐65
o
C to +125
o
C
2.0 A
100 mA
10.0 A
260° C
(1)(2)
200 mW
(3)
General Note
TT Electronics reserves the right to make changes in product specification without notice or
liability. All information is subject to TT Electronics’ own data and is considered accurate at
time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
07/2016
Page 2
Hermetic Infrared Emitting Diode
OP230 Series
Electrical Characteris cs (T
A
= 25°C unless otherwise noted)
SYMBOL
Input Diode
Apertured Radiant Incidence
OP231
OP232
OP233
OP234
OP235
OP231W
OP232W
OP233W
OP234W
OP235W
P
O
V
F
I
R
λ
P
β
∆λ
P
/∆T
θ
HP
t
r
t
f
Radiant Power Output
OP231
OP232
OP233
Forward Voltage
Reverse Current
Wavelength at Peak Emission
OP231, OP232, OP233
OP234, OP235
Spectral Bandwidth between Half Power
Points
Spectral Shi with Temperature
Emission Angle at Half Power Points
OP231
‐
OP235
OP231W
‐
OP231W
Output Rise Time
Output Fall Time
1.5
2.0
3.0
5.0
6.0
1.5
3.5
5.0
5.0
6.0
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
6.0
8.0
10.0
‐
‐
890
850
80
+0.30
18
50
500
250
‐
6.0
‐
‐
‐
‐
7.0
‐
‐
‐
‐
‐
‐
2.0
100
‐
‐
‐
‐
‐
‐
‐
‐
OP231 Series
I
F
= 100 mA
(3 )(4)
Aperture = 0.250”
Distance = 1.429”
OP231W Series
I
F
= 100 mA
(3 )(4)
Aperture = 0.250”
Distance = 0.466”
PARAMETER
MIN
TYP
MAX UNITS
TEST CONDITIONS
mW/
cm
2
E
E(APTa)
mW/
cm
2
mW
V
µA
nm
nm
I
F
= 100 mA
(3 )(4)
I
F
= 100 mA
(3)
V
R
= 2.0 V
I
F
= 10 mA
I
F
= 10 mA
nm/°C I
F
= Constant
Degree I
F
= 100 mA
ns
ns
I
F(PK)
=100 mA, PW=10 µs, and
D.C.=10.0%
Notes:
1. RMA
flux
is recommended. Dura on can be extended to 10 seconds maximum when
flow
soldering.
2. Derate linearly 2.0 mW/° C above 25° C.
3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an I
F
= 100 mA.
4. For the OP231 series, E
E(APT)
is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of
1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10°
cone. For the OP231W series, E
E(APT)
is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius
of 0.466” (11.84 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a
10° cone. E
E(APT)
is not necessarily uniform within the measured area.
General Note
TT Electronics reserves the right to make changes in product specification without notice or
liability. All information is subject to TT Electronics’ own data and is considered accurate at
time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
07/2016
Page 3
Hermetic Infrared Emitting Diode
OP230 Series
OP231, OP232, OP233 (including “W” devices)
Forward Voltage vs Forward Current vs
Temperature
1.8
1.7
1.6
3.5
Normalized at 50 mA and 20° C
3.0
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Optical Power vs I
F
vs Temperature
Typical Forward Voltage (V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
10
20
30
40
50
60
70
80
90
100
Forward Current (mA)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Normalized Optical Power
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
100
Forward Current I
F
(mA)
Distance vs Output Power vs Forward Current
6
Normalized at 1" and 50 mA
Relative Radiant Intensity vs. Angular
Displacement
1.0
0.9
5
Forward Current
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
90 mA
100 mA
0.8
Relative Radiant Intensity
0.7
0.6
0.5
0.4
0.3
0.2
Normalized Output Power
4
3
2
1
0.1
0
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
0.0
-20
-15
-10
-5
0
5
10
15
20
Distance (inches)
General Note
TT Electronics reserves the right to make changes in product specification without notice or
liability. All information is subject to TT Electronics’ own data and is considered accurate at
time of going to print.
© TT electronics plc
Angular Displacement (Degrees)
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
07/2016
Page 4
Hermetic Infrared Emitting Diode
OP230 Series
OP234, OP234W
Forward Voltage vs Forward Current vs
Temperature
1.8
Optical Power vs Forward Current vs
Temperature
2.5
Normalized at 50 mA and 20°C
1.6
2.0
Typical Forward Voltage (V)
1.4
Relative Output Power
1.5
1.2
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
1.0
1.0
0.5
0.8
0.6
0
5
10
15
20
25
30
35
40
45
50
0.0
0
10
20
30
40
50
60
70
80
90
100
Forward Current (mA)
Forward Current I
F
(mA)
Distance vs Output Power vs Forward Current
10.00
Normalized at 1.0" and 50 mA
1.0
1.2
Relative Radiant Intensity vs Angular
Displacement
Normalized Output Power
Relative Radiant Intensity
1.00
0.8
0.6
Forward Current
0.10
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
80 mA
100 mA
120 mA
0.4
0.2
0.01
0.2 ''
0.7 ''
1.2 ''
1.7 ''
0.0
-80
-30
20
70
Angular Displacement (Degrees)
Distance (inches)
General Note
TT Electronics reserves the right to make changes in product specification without notice or
liability. All information is subject to TT Electronics’ own data and is considered accurate at
time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B
07/2016
Page 5
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