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FDC6305N
March 1999
FDC6305N
Dual N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These N-Channel low threshold 2.5V specified
MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.
Features
•
2.7 A, 20 V. R
DS(ON)
= 0.08
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.12
Ω
@ V
GS
= 2.5 V
•
•
•
•
Low gate charge (3.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
•
Load switch
•
DC/DC converter
•
Motor driving
D2
S1
D1
5
2
4
3
G2
SuperSOT
TM
-6
S2
G1
T
A
= 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
20
(Note 1a)
Units
V
V
A
W
±
8
2.7
8
0.96
0.9
0.7
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
°
C/W
°
C/W
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
Package Outlines and Ordering Information
Device Marking
.305
©1999
Fairchild Semiconductor Corporation
Device
FDC6305N
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDC6305N, Rev. C
FDC6305N
Electrical Characteristics
Symbol
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14
1
100
-100
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
GS
= 4.5, I
D
= 2.7 A
V
GS
= 4.5 I
D
= 2.7 A, T
J
= 125
°
C
V
GS
= 2.5 V, I
D
= 2.2 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 2.7 A
0.4
0.9
-2.7
0.060
0.095
0.085
1.5
V
mV/
°
C
0.080
0.128
0.120
Ω
I
D(on)
g
FS
6
8
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
310
80
40
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
5
8.5
11
3
15
17
20
10
5
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 2.7 A,
V
GS
= 4.5 V
3.5
0.55
0.95
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.8 A
(Note 2)
0.8
0.77
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design. Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130
°C/W
when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°C/W
when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°C/W
on a minimum
mounting pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDC6305N, Rev. C
FDC6305N
Typical Characteristics
10
3.0V
I
D
, DRAIN CURRENT (A)
8
3.5V
2.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
1.6
1.4
V
GS
= 2.5V
6
2.0V
1.2
3.0V
3.5V
4.0V
4
2
1.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
4.5V
0.8
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.24
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 2.7A
V
GS
= 4.5V
1.4
I
D
= 1.4A
0.2
0.16
0.12
1.2
T
A
= 125
o
C
1
0.08
T
A
= 25
o
C
0.8
0.04
0
1
2
3
0.6
-50
-25
0
25
50
75
100
o
125
150
4
5
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
10
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
8
T
A
= -55
o
C
10
125 C
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
I
S
, REVERSE DRAIN CURRENT (A)
25 C
o
V
GS
= 0V
1
T
A
= 125 C
0.1
25 C
-55 C
0.01
o
o
o
6
4
2
0.001
0
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6305N, Rev. C
FDC6305N
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 2.7A
4
(continued)
500
V
DS
= 5V
10V
CAPACITANCE (pF)
15V
400
C
ISS
f = 1MHz
V
GS
= 0 V
3
300
2
200
1
100
C
OSS
C
RSS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
g
, GATE CHARGE (nC)
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
R
DS(ON)
LIMIT
1ms
I
D
, DRAIN CURRENT (A)
10ms
POWER (W)
1
1s
DC
100ms
100µs
5
SINGLE PULSE
4
R
θ
JA
= 180 C/W
T
A
= 25 C
o
o
3
2
0.1
V
GS
= 4.5V
SINGLE PULSE
o
R
θJA
= 180 C/W
TA = 25 C
o
1
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
D = 0.5
0.2
0.1
0.05
0.2
0.1
P(pk)
0.05
0.02
0.01
Single Pulse
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 180°C/W
t
1
t
2
0.02
0.01
0.0001
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/ t
0.01
0.1
t
1
, TIME (sec)
1
10
2
0.001
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDC6305N, Rev. C
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