EEWORLDEEWORLDEEWORLD

Part Number

Search

H11B255300W

Description
OPTOISO 5.3KV DARL W/BASE 6DIP
CategoryLED optoelectronic/LED   
File Size159KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

H11B255300W Online Shopping

Suppliers Part Number Price MOQ In stock  
H11B255300W - - View Buy Now

H11B255300W Overview

OPTOISO 5.3KV DARL W/BASE 6DIP

H11B255300W Parametric

Parameter NameAttribute value
Number of channels1
Voltage - Isolation5300Vrms
Current transfer ratio (minimum value)100% @ 10mA
Current transfer ratio (maximum)-
Open/close time (typ.)25µs,18µs
Rise/Fall Time (Typical)-
input typeDC
Output typeDarlington transistor with base
Voltage - Output (maximum)55V
Current - Output/Channel-
Voltage - Forward (Vf) (Typical)1.2V
Current - DC Forward (If)100mA
Vce saturation value (maximum value)1V
Operating temperature-55°C ~ 100°C
Installation typeThrough hole
Package/casing6-DIP(0.400",10.16mm)
Supplier device packaging6-DIP
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The CNX48U, H11BX, MOC8080 and TIL113 have a
gallium arsenide infrared emitter optically coupled to a
silicon planar photodarlington.
CNX48U
H11B1
MOC8080 TIL113
H11B2
H11B255
H11B3
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., H11B1.300)
6
1
6
1
ANODE 1
6 BASE
SCHEMATIC
APPLICATIONS
Low power logic circuits
6
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances.
CATHODE 2
5 COLLECTOR
1
N/C 3
4 EMITTER
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
All
CNX48U, TIL113
H11B1, H11B2
Value
-55 to +150
-55 to +100
260 for 10 sec
250
3.3
100
6
3.0
100
1.8
30
25
55
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
Collector-Emitter Breakdown Voltage
BV
CEO
H11B3
H11B255
MOC8080
CNX48U, H11B1
H11B2, H11B3
V
30
V
Collector-Base Breakdown Voltage
BV
CBO
TIL113
H11B255
MOC8080
55
7
150
2.0
V
V
mW
mW/°C
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
BV
ECO
P
D
All
All
6/1/00
200042A

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 328  1019  377  2458  1062  7  21  8  50  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号