6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVERS
(600 VOLT PEAK)
MOC3051-M
PACKAGE
MOC3052-M
SCHEMATIC
ANODE 1
6 MAIN TERM.
6
6
1
1
N/C 3
4 MAIN TERM.
CATHODE 2
5 NC*
*DO NOT CONNECT
(TRIAC SUBSTRATE)
6
1
DESCRIPTION
The MOC3051-M and MOC3052-M consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing silicon
bilateral AC switch (triac). These devices isolate low voltage logic from 115 and 240 Vac lines to provide random phase control of
high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching perfor-
mance of inductive loads.
FEATURES
•
•
•
•
•
Excellent I
FT
stability—IR emitting diode has low degradation
High isolation voltage—minimum 7500 peak VAC
Underwriters Laboratory (UL) recognized—File #E90700
600V peak blocking voltage
VDE recognized (File #94766)
- Ordering option V (e.g. MOC3052V-M)
APPLICATIONS
•
•
•
•
•
•
•
•
Solenoid/valve controls
Lamp ballasts
Static AC power switch
Interfacing microprocessors to 115 and 240 Vac peripherals
Solid state relay
Incandescent lamp dimmers
Temperature controls
Motor controls
© 2004 Fairchild Semiconductor Corporation
Page 1 of 11
9/2/04
6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVERS
(600 VOLT PEAK)
MOC3051-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation Surge Voltage
(3)
(peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Total Power Dissipation 25°C Ambient
Derate above 25°C
DETECTOR
Off-State Output Terminal Voltage
Peak Repetitive Surge Current (PW = 100 ms, 120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
V
DRM
I
TSM
P
D
All
All
All
I
F
V
R
P
D
All
All
All
T
STG
T
OPR
T
SOL
T
J
V
ISO
P
D
All
All
All
All
All
All
Symbol
Device
MOC3052-M
Value
Units
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
330
4.4
60
3
100
1.33
600
1
300
4
°C
°C
°C
°C
Vac(pk)
mW
mW/°C
mA
V
mW
mW/°C
V
A
mW
mW/°C
© 2004 Fairchild Semiconductor Corporation
Page 2 of 11
9/2/04
6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVERS
(600 VOLT PEAK)
MOC3051-M
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Peak Blocking Current, Either Direction
Peak On-State Voltage, Either Direction
Critical Rate of Rise of Off-State Voltage
V
DRM
, I
F
= 0 (note 1)
I
TM
= 100 mA peak, I
F
= 0
I
F
= 0 (figure 7, @400V)
I
DRM
V
TM
dv/dt
All
All
All
1000
I
F
= 10 mA
V
R
= 3 V
V
F
I
R
All
All
Test Conditions
Symbol Device
Min
MOC3052-M
Typ*
Max
Units
1.15
0.05
10
1.7
1.5
100
100
2.5
V
µA
nA
V
V/µs
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristics
LED Trigger Current,
either direction
Holding Current, Either Direction
*Typical values at T
A
= 25°C
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an I
F
value less than or equal to max I
FT
. Therefore, recommended operating I
F
lies
between max 15 mA for MOC3051, 10 mA for MOC3052 and absolute max I
F
(60 mA).
3. Isolation surge votlage, VISO, is an internal device breakdown rating. For this text, pins 1 and 2 are common, and pins 4, 5 and
6 are common.
Test Conditions
Main terminal
Voltage = 3V (note 2)
Symbol
I
FT
I
H
Device
MOC3051-M
MOC3052-M
All
280
Min
Typ*
Max
15
10
Units
mA
µA
© 2004 Fairchild Semiconductor Corporation
Page 3 of 11
9/2/04
6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVERS
(600 VOLT PEAK)
MOC3051-M
Figure. 1 LED Forward Voltage vs. Forward Current
1.8
MOC3052-M
Figure. 2 On-State Characteristics
800
1.7
600
ON-STATE CURRENT - I
TM
(mA)
V
F
- FORWARD VOLTAGE (V)
1.6
400
1.5
200
1.4
0
T
A
= -55
o
C
-200
1.3
T
A
= 25
o
C
-400
1.2
T
A
= 100 C
o
-600
1.1
-800
1.0
1
10
100
-3
-2
-1
0
1
2
3
ON-STATE VOLTAGE - V
TM
(V)
I
F
- LED FORWARD CURRENT (mA)
Figure. 3 Trigger Current vs. Ambient Temperature
1.4
Figure. 4 LED Current Required to Trigger vs. LED Pulse Width
IFT, NORMALIZED LED TRIGGER CURRENT
25
NORMALIZED TO:
PWin
≥
100
µs
1.3
TRIGGER CURRENT - I
FT
(NORMALIZED)
20
1.2
15
1.1
10
1.0
5
0.9
0
0.8
1
2
5
10
20
50
100
PWin, LED TRIGGER PULSE WIDTH (µs)
0.7
NORMALIZED TO TA = 25°C
0.6
-40
-20
0
20
40
60
80
100
AMBIENT TEMPERATURE - T
A
(
o
C)
I
F
versus Temperature (normalized)
This graph (figure 3) shows the increase of the trigger current
when the device is expected to operate at an ambient tempera-
ture below 25°C. Multiply the normalized I
FT
shown this graph
with the data sheet guaranteed I
FT
.
Example:
T
A
= -40°C, I
FT
= 10 mA
I
FT
@ -40°C = 10 mA x 1.4 = 14 mA
sine wave. Phase control may be accomplished by an AC line
zero cross detector and a variable pulse delay generator which
is synchronized to the zero cross detector. The same task can
be accomplished by a microprocessor which is synchronized
to the AC zero crossing. The phase controlled trigger current
may be a very short pulse which saves energy delivered to the
input LED. LED trigger pulse currents shorter than 100 µs must
have an increased amplitude as shown on Figure 4. This graph
shows the dependency of the trigger current I
FT
versus the
pulse width can be seen on the chart delay t(d) versus the LED
trigger current.
I
FT
in the graph I
FT
versus (PW) is normalized in respect to the
minimum specified I
FT
for static condition, which is specified in
the device characteristic. The normalized I
FT
has to be multi-
plied with the devices guaranteed static trigger current.
Example:
Guaranteed I
FT
= 10 mA, Trigger pulse width PW = 3 µs
I
FT
(pulsed) = 10 mA x 5 = 50 mA
Phase Control Considerations
LED Trigger Current versus PW (normalized)
Random Phase Triac drivers are designed to be phase control-
lable. They may be triggered at any phase angle within the AC
© 2004 Fairchild Semiconductor Corporation
Page 4 of 11
9/2/04
6-PIN DIP RANDOM-PHASE
OPTOISOLATORS TRIAC DRIVERS
(600 VOLT PEAK)
MOC3051-M
MOC3052-M
Minimum LED Off Time in Phase Control
Applications
AC SINE
0ϒ
180°
LED PW
LED CURRENT
LED TURN OFF MIN 200
µs
Figure 5. Minimum Time for LED Turn–Off to Zero
Cross of AC Trailing Edge
In Phase control applications one intends to be able to control
each AC sine half wave from 0 to 180 degrees. Turn on at zero
degrees means full power and turn on at 180 degree means
zero power. This is not quite possible in reality because triac
driver and triac have a fixed turn on time when activated at
zero degrees. At a phase control angle close to 180 degrees
the driver’s turn on pulse at the trailing edge of the AC sine
wave must be limited to end 200 ms before AC zero cross as
shown in Figure 5. This assures that the triac driver has time
to switch off. Shorter times may cause loss of control at the
following half cycle.
Figure. 7 Leakage Current, I
DRM
vs. Temperature
10000
Figure. 6 Holding Current, I
H
vs. Temperature
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 40 - 30 - 20 -10
0
10
20
30
40
50
60
70
80
0.1
-40
IH, HOLDING CURRENT (mA)
IDRM LEAKAGE CURRENT (nA)
,
1000
100
10
1
TA , AMBIENT TEMPERATURE (
o
C)
-20
0
20
40
60
80
100
TA , AMBIENT TEMPERATURE (
o
C)
I
FT
versus dv/dt
Figure. 8 LED Trigger Current, I
FT
vs. dv/dt
IFT, LED TRIGGER CURRENT (NORMALIZED)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.001
0.01
0.1
1
10
100
1000
10000
NORMALIZED TO:
IFT at 3 V
Triac drivers with good noise immunity (dv/dt static) have inter-
nal noise rejection circuits which prevent false triggering of the
device in the event of fast raising line voltage transients. Induc-
tive loads generate a commutating dv/dt that may activate the
triac drivers noise suppression circuits. This prevents the
device from turning on at its specified trigger current. It will in
this case go into the mode of “half waving” of the load. Half
waving of the load may destroy the power triac and the load.
Figure 8 shows the dependency of the triac drivers I
FT
versus
the reapplied voltage rise with a Vp of 400 V. This dv/dt condi-
tion simulates a worst case commutating dv/dt amplitude.
It can be seen that the I
FT
does not change until a commutat-
ing dv/dt reaches 1000 V/ms. The data sheet specified I
FT
is
therefore applicable for all practical inductive loads and load
factors.
Page 5 of 11
dv/dt (V/
µs)
© 2004 Fairchild Semiconductor Corporation
9/2/04
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