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BSP320SL6433HTMA1

Description
MOSFET N-CH 60V 2.9A SOT-223
CategoryDiscrete semiconductor    The transistor   
File Size454KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSP320SL6433HTMA1 Overview

MOSFET N-CH 60V 2.9A SOT-223

BSP320SL6433HTMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)2.9 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)11.6 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
BSP320S
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
Tape and Reel
PG-SOT223 L6327: 1000pcs/r
PG-SOT223 L6433: 4000pcs/r
Packaging
Non dry
1
PIN
Non dry
Rev 2.3
2008-03-26
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