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BUK9Y11-80EX

Description
MOSFET N-CH 80V 84A LFPAK
Categorysemiconductor    Discrete semiconductor   
File Size739KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BUK9Y11-80EX Overview

MOSFET N-CH 80V 84A LFPAK

BUK9Y11-80EX Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)80V
Current - Continuous Drain (Id) at 25°C84A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)5V
Rds On (maximum value) when different Id, Vgs10 milliohms @ 25A, 10V
Vgs (th) (maximum value) when different Id2.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)44.2nC @ 5V
Vgs (maximum value)±10V
Input capacitance (Ciss) at different Vds (maximum value)6506pF @ 25V
FET function-
Power dissipation (maximum)194W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingLFPAK56,Power-SO8
Package/casingSC-100,SOT-669,4-LFPAK
BUK9Y11-80E
8 May 2013
N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
80
84
194
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
8.1
11
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 25 A; V
DS
= 64 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
-
13.2
-
nC
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