WS57LV291C
PRELIMINARY
HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM
KEY FEATURES
•
3.3 Volt ± 0.3 Volt V
CC
•
Fast Access Time
— t
ACC
= 70 ns
— t
CS
= 20 ns
•
Available in 300 Mil "Skinny" DIP
•
Immune to Latch-up
— Up to 200 mA
•
ESD Protection Exceeds 2000V
•
Low Power Consumption
—
≤
25 mA I
CC
GENERAL DESCRIPTION
The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM).
This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low
power die that affords exceptional speed capabilities with a 3.3 volt V
CC
supply. The WS57LV291C
is configured in the standard Bipolar PROM pinouts, the preferred and most common pinout for high speed PROMs
of 16K density.
Operating at 3.3 volts, the WS57LV291C dissipates a maximum of 25 mA under worst case conditions at maximum
speed (70 ns T
AA
). Typical I
CC
at 25°C is less than 20 milliamps.
The WS57LV291C is packaged in a space saving 300 mil windowed, hermetic DIP package.
BLOCK DIAGRAM
PIN CONFIGURATION
TOP VIEW
CERDIP
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
8
A
9
A10
CS1/V
PP
CS2
CS3
O
7
O
6
O
5
O
4
O
3
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
COLUMN
DECODER
SENSE
AMPLIFIERS
CS1/ V
PP
CS2
CS3
8
OUTPUTS
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
WS57LV291C-70
70 ns
20 ns
WS57LV291C-90
90 ns
30 ns
Return to Main Menu
2-15
WS57LV291C
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature............................–65° to + 150°C
Voltage on any Pin with
Respect to Ground ....................................–0.6V to +7V
V
PP
with Respect to Ground...................–0.6V to + 14V
ESD Protection ..................................................
>
2000V
MODE SELECTION
PINS
MODE
CS1/
V
PP
CS2
CS3
VCC
OUTPUTS
Read
Output
Disable
Output
Disable
Output
Disable
Program
Program
Verify
V
IL
V
IH
X
X
V
PP
V
IL
V
IH
X
V
IL
X
X
V
IH
V
IH
X
X
V
IL
X
V
IH
V
CC
V
CC
V
CC
V
CC
V
CC
V
CC
D
OUT
High Z
High Z
High Z
D
IN
D
OUT
*
NOTICE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at these or any other conditions above
those indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of
time may affect device reliability.
OPERATING RANGE
RANGE
Commercial
TEMPERATURE
0°C to +70°C
V
CC
+ 3.3V ± 0.3V
DC READ CHARACTERISTICS
Over Operating Range. (See Above)
SYMBOL
V
IL
V
IH
V
OL
V
OH
I
CC
I
LI
I
LO
NOTES:
PARAMETER
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
TEST CONDITIONS
(Note 3)
(Note 3)
I
OL
= 16 mA
I
OH
= –4 mA
(Notes 1 and 2)
I
CC
at Maximum Frequency
Outputs Not Loaded
V
IN
= 3.6V or Gnd
V
OUT
= 3.6 V or Gnd
MIN
–0.1
2.0
2.4
MAX
0.6
V
CC
+ 0.3
0.4
UNITS
V
V
V
V
V
CC
Active Current (CMOS)
Input Leakage Current
Output Leakage Current
25
–10
–10
10
10
mA
µA
µA
1. CMOS inputs: GND ± 0.3V or V
CC
± 0.3V.
2. For TTL inputs add 5 mA ICC.
3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise.
Do not attempt to test these values without suitable equipment.
AC READ CHARACTERISTICS
Over Operating Range. (See Above)
PARAMETER
Address to Output Delay
CS to Output Delay
Output Disable to Output Float
*
Address to Output Hold
*Sampled, Not 100% Tested.
SYMBOL
t
ACC
t
CS
t
DF
t
OH
WS57LV291C-70
MIN
MAX
WS57LV291C-90
MIN
MAX
UNITS
70
20
20
0
0
90
30
ns
30
2-16
WS57LV291C
AC READ TIMING DIAGRAM
ADDRESSES
VALID
t
ACC
t
OH
CS
t
CS
OUTPUTS
VALID
t
DF
CAPACITANCE
(4)
T
A
= 25°C, f = 1 MHz
SYMBOL
C
IN
C
OUT
C
VPP
PARAMETER
Input Capacitance
Output Capacitance
V
PP
Capacitance
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
V
PP
= 0 V
TYP
(5)
4
8
18
MAX
6
12
25
UNITS
pF
pF
pF
NOTES:
4. This parameter is only sampled and is not 100% tested.
5. Typical values are for TA = 25°C and nominal supply voltages.
TEST LOAD
(High Impedance Test Systems)
A.C. TESTING INPUT/OUTPUT WAVEFORM
98
Ω
1.80 V
D.U.T.
3.0
1.5
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
0.0
TEST
POINTS
1.5
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
NOTE:
6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between V
CC
and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
2-17
WS57LV291C
NORMALIZED SUPPLY CURRENT
vs.
SUPPLY VOLTAGE
1.60
40.0
35.0
1.40
30.0
NORMALIZED I
CC
DELTA T
aa
(ns)
1.20
25.0
20.0
15.0
10.0
5.0
0.60
4.0
4.5
5.0
5.5
6.0
SUPPLY VOLTAGE ( V )
0.0
TYPICAL ACCESS TIME CHANGE
vs.
OUTPUT LOADING
1.00
0.80
0.0
200
400
600
800
1000
CAPACITANCE ( pF )
NORMALIZED Taa
vs.
AMBIENT TEMPERATURE
1.6
1.2
NORMALIZED SUPPLY CURRENT
vs.
AMBIENT TEMPERATURE
1.4
1.1
NORMALIZED T
aa
1.2
NORMALIZED I
CC
1.0
1.0
0.9
0.8
0.6
-55 -35 -15
5
25
45
65
85
105 125
AMBIENT TEMPERATURE (°C )
0.8
-55 -35 -15
5
25
45
65
85
105 125
AMBIENT TEMPERATURE (°C)
2-18
WS57LV291C
PROGRAMMING INFORMATION
DC CHARACTERISTICS
(T
A
= 25 ± 5°C, V
CC
= 6.25 V ± 0.25 V, V
PP
= 12.75 ± 0.25 V)
SYMBOLS
I
LI
I
PP
I
CC
V
OL
V
OH
PARAMETER
Input Leakage Current
(V
IN
= V
CC
or Gnd)
V
PP
Supply Current During
Programming Pulse
V
CC
Supply Current
Output Low Voltage During Verify
(I
OL
= 16 mA)
Output High Voltage During Verify
(I
OH
= –4 mA)
2.4
MIN
–10
MAX
10
60
25
0.45
UNITS
µA
mA
mA
V
V
NOTES:
7. V
PP
must not be greater than 13 volts including overshoot.
AC CHARACTERISTICS
(T
A
= 25 ± 5°C, V
CC
= 6.25 V ± 0.25 V, V
PP
= 12.75 ± 0.25 V)
SYMBOLS
t
AS
t
DF
t
DS
t
PW
t
DH
t
CS
t
RF
PARAMETER
Address Setup Time
Chip Disable Setup Time
Data Setup Time
Program Pulse Width
Data Hold Time
Chip Select Delay
V
PP
Rise and Fall Time
1
2
100
2
30
200
MIN
2
30
TYP
MAX
UNITS
µs
ns
µs
µs
µs
ns
µs
PROGRAMMING WAVEFORM
V
IH
ADDRESSES
V
IL
V
IH
DATA
V
IL
t
DS
V
PP
t
DF
t
PW
t
DH
t
CS
DATA IN
DATA OUT
t
AS
ADDRESS STABLE
V
IH
CS1/V
PP
V
IL
V
IH
DON'T CARE
V
IL
t
RF
t
RF
CS2/CS3
2-19
京公网安备 11010802033920号
EEWORLD
