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DF5A6.8LJE,LM(T

Description
TVS DIODE 5VWM ESV
CategoryCircuit protection   
File Size138KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF5A6.8LJE,LM(T Overview

TVS DIODE 5VWM ESV

DF5A6.8LJE,LM(T Parametric

Parameter NameAttribute value
typeZina
One way channel4
Voltage - Reverse OFF (Typical)5V
Voltage - Breakdown (minimum)6.5V
电压 - 箝位(最大值)@ Ipp-
Current - Peak Pulse (10/1000µs)-
Power - Peak Pulse-
Power line protectionnone
applicationUniversal
Capacitance at different frequencies6pF @ 1MHz
Operating temperature-
Installation typesurface mount
Package/casingSOT-553
Supplier device packagingESV
DF5A6.8LJE
TOSHIBA Diodes for Protecting against ESD
DF5A6.8LJE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low Terminal capacitance (between Cathode and Anode)
: C
T
= 6.0 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
150
−55
to 150
Unit
mW
°C
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
1−2W1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.003 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
6.5
Typ.
6.8
6.0
Max
7.1
50
0.5
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
8 kV
Criterion: No damage to device elements
Start of commercial production
2003-02
1
2014-03-01
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