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ES1DV M2G

Description
DIODE GEN PURP 200V 1A DO214AC
Categorysemiconductor    Discrete semiconductor   
File Size185KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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ES1DV M2G Overview

DIODE GEN PURP 200V 1A DO214AC

ES1DV M2G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf920mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)15ns
Current at different Vr - Reverse leakage current5µA @ 200V
Capacitance at different Vr, F17pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-214AC,SMA
Supplier device packagingDO-214AC(SMA)
Operating Temperature - Junction-55°C ~ 150°C
ES1DV
Taiwan Semiconductor
CREAT BY ART
1A, 200V Surface Mount Ultra Fast Rectifier
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Ultra fast recovery time for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level (MSL): level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied V
R
=4.0 V
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
ES1DV
200
140
200
1
30
0.92
5
100
15
17
35
85
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: B1601

ES1DV M2G Related Products

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Description DIODE GEN PURP 200V 1A DO214AC Rectifiers 1A, 200V, SUPER FAST SM RECTIFIER Rectifiers 1A, 200V, SUPER FAST SM RECTIFIER Rectifiers 1A, 200V, SUPER FAST SM RECTIFIER Rectifiers 1A, 200V, SUPER FAST SM RECTIFIER Rectifiers 1A, 200V, SUPER FAST SM RECTIFIER DIODE GEN PURP 200V 1A DO214AC DIODE GEN PURP 200V 1A DO214AC Rectifier 1A, 200V, SUPER FAST SM RECTIFIER
Diode type standard - RECTIFIER DIODE - - - RECTIFIER DIODE standard RECTIFIER DIODE
Configuration - Single SINGLE Single Single Single SINGLE - SINGLE

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