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TSM10NC65CF C0G

Description
MOSFET N-CH 650V 10A ITO220S
Categorysemiconductor    Discrete semiconductor   
File Size330KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSM10NC65CF C0G Overview

MOSFET N-CH 650V 10A ITO220S

TSM10NC65CF C0G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)650V
Current - Continuous Drain (Id) at 25°C10A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs900 milliohms @ 2A, 10V
Vgs (th) (maximum value) when different Id4.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)34nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)1650pF @ 50V
FET function-
Power dissipation (maximum)45W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingITO-220S
Package/casingTO-220-3 whole package
TSM10NC65CF
Taiwan Semiconductor
N-Channel Power MOSFET
650V, 10A, 0.9Ω
FEATURES
● 100% UIS and R
g
tested
● Advanced planar process
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
650
0.9
34
UNIT
V
Ω
nC
APPLICATIONS
● AC/DC LED Lighting
● Power Supply
ITO-220S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
(Note 3)
(Note 3)
Limit
650
±30
10
6.3
30
45
372
6.1
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
Limit
2.8
62
UNIT
°C/W
°C/W
Thermal Performance Note:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
1
Version: A1605

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