Datasheet
7.0V to 36V Input, 3.0A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9E303EFJ-LB
General Description
This is the product guarantees long time support in
Industrial market.BD9E303EFJ-LB is a synchronous buck
switching regulator with built-in power MOSFETs. It is a
current mode control DC/DC converter and features
high-speed transient response. Phase compensation can
also be set easily.
Key Specifications
Input Voltage Range:
7.0V to 36V
Output Voltage Range:
1.0V to V
IN
×0.8V
Output Current:
3.0A (Max)
Switching Frequency:
300kHz (Typ)
High-Side MOSFET ON-Resistance: 90mΩ (Typ)
Low-Side MOSFET ON-Resistance: 80mΩ (Typ)
Standby Current:
0μA (Typ)
W (Typ) x D (Typ) x H (Max)
4.90mm x 6.00mm x 1.00mm
Features
Long Time Support Product for Industrial
Applications.
Synchronous single DC/DC converter.
Over-Current Protection.
Short Circuit Protection.
Thermal Shutdown Protection.
Under voltage Lockout Protection.
Soft Start.
HTSOP-J8 package (Exposed Pad).
Industrial Equipment.
Power supply for FA’s industrial device using 24V
bass.
Consumer applications such as home appliance.
Distribution type power supply system for 12V, and
24V.
Package
HTSOP-J8
Applications
HTSOP-J8
Typical Application Circuit
VIN
24V
10μF
0.1μF
2 VIN
BD9E303EFJ-LB
BOOT 1
0.1μF
SW 8
10μH
VOUT
Enable
3 EN
COMP
6
6800pF
15kΩ
7.5kΩ
AGND
4
PGND
7
FB
5
30kΩ
22μF×2
Figure 1. Application circuit
○Product
structure：Silicon monolithic integrated circuit.
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product is not designed for protection against radioactive rays.
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BD9E303EFJ-LB
Pin Configuration
(TOP VIEW)
BOOT
VIN
EN
AGND
1
2
3
4
8
7
6
5
SW
PGND
COMP
FB
Datasheet
E-Pad
Figure 2. Pin assignment
Pin Description(s)
Pin No
1
Pin Name
BOOT
Description
Connect a bootstrap capacitor of 0.1µF between this terminal and SW terminal.
The voltage of this capacitor is the gate drive voltage of the high-side MOSFET.
Power supply terminal for the switching regulator and control circuit.
Connecting a 10µF and 0.1µF ceramic capacitor is recommended.
Turning this terminal signal low-level (0.8V or lower) forces the device to enter the shut
down mode. Turning this terminal signal high-level (2.5V or higher) enables the device.
This terminal must be terminated.
Ground terminal for the control circuit.
Inverting input node for the gm error amplifier.
See page 18 on how to calculate the resistance of the output voltage setting.
Output of gm error amplifier, and input of PWM comparator. Connect phase
compensation components to this pin. See page 20 on how to calculate the resistance
and capacitance for phase compensation.
Ground terminal for the output stage of the switching regulator.
Switch node. This terminal is connected to the source of the high-side MOSFET and
drain of the low-side MOSFET. Connect a bootstrap capacitor of 0.1µF between this
terminal and BOOT terminal. In addition, connect an inductor considering the direct
current superimposition characteristic.
Exposed pad. Connecting this to the internal PCB ground plane using multiple vias
provides excellent heat dissipation characteristics.
2
VIN
3
EN
4
5
AGND
FB
6
COMP
7
PGND
8
SW
-
E-Pad
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Block Diagram
Datasheet
EN
3
VREG3
3V
VREG
5V
BOOTREG
1
BOOT
SCP
OVP
UVLO
TSD
OSC
OCP
VIN
VIN
2
RCP
ERR
FB
DRIVER
LOGIC
8
SW
VOUT
5
SLOPE
VRE
PWM
F
COMP
6
SOFT
START
7
PGND
4
AGND
Figure 3. Block diagram
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Description of Block
VREG3
Block creating internal reference voltage 3V (Typ).
VREG
Block creating internal reference voltage 5V (Typ).
BOOTREG
Block creating gate drive voltage.
Datasheet
TSD
This is the thermal shutdown block. Thermal shutdown circuit shuts down the whole system if temperature exceeds 175°C
(Typ). When the temperature decreases, it returns to normal operation with hysteresis of 25°C (Typ).
UVLO
This is the under voltage lock-out block. IC shuts down when VIN is under 5V (Typ). The threshold voltage has a
hysteresis of 1.4V (Typ).
ERR
This circuit compares the feedback voltage at the output to the reference voltage. The output of this circuit is the COMP
terminal voltage and this determines the switching duty. Also, because of soft start during start-up, COMP terminal voltage
is controlled by internal slope voltage.
OSC
Block generating oscillation frequency.
SLOPE
This circuit creates a triangular wave from generated clock in OSC. The voltage converted from current sense signal of
high side MOSFET and the triangular wave is sent to PWM comparator.
PWM
This block determines the switching duty by comparing the output COMP terminal voltage of error amplifier and output of
SLOPE block.
DRIVER LOGIC
This is the DC/DC driver block. Input to this block is signal from PWM and output drives the MOSFETs.
SOFT START
This circuit prevents the overshoot of output voltage and In-rush current by forcing the output voltage to rise slowly, thus,
avoiding surges in current during start-up.
OCP
This block limits the current flowing in high side MOSFET for each cycle of switching frequency during over-current.
RCP
This block limits the current flowing in low side MOSFET for each cycle of switching frequency during over-current.
SCP
The short circuit protection block compares the FB terminal voltage with the internal standard voltage VREF. When the FB
terminal voltage has fallen below 0.7V (Typ) and remained in that state for 1.0msec (Typ), SCP activates and stops the
operation for 14msec (Typ) and subsequently initiates a restart.
OVP
Over voltage protection function (OVP) compares FB terminal voltage with the internal standard voltage VREF. When the
FB terminal voltage exceeds 1.30V (Typ) it turns MOSFET of output part MOSFET off. After output voltage drop it returns
with hysteresis.
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Absolute Maximum Ratings (Ta = 25°C)
Parameter
Supply Voltage
EN Input Voltage
Voltage from GND to BOOT
Voltage from SW to BOOT
FB Input Voltage
COMP Input Voltage
SW Input Voltage
Allowable Power Dissipation
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
IN
V
EN
V
BOOT
∆V
BOOT
V
FB
V
COMP
V
SW
Pd
Tj
Tstg
Rating
-0.3 to +40
-0.3 to +40
-0.3 to +45
-0.3 to +7
-0.3 to +7
-0.3 to +7
-0.5 to VIN + 0.3
2.76
(Note 1)
-40 to +150
-55 to +150
Unit
V
V
V
V
V
V
V
W
C
C
Datasheet
(Note 1) HTSOP-J8:Derating in done 22mW/°C for operating Ta
≥
25°C
(PCB size: 114.3 mm × 76.2 mm × 1.6 mm, copper foil area (on 2nd & 3rd layer and reverse side): 74.2 mm × 74.2 mm when mounted on 4-layer PCB)
Copper foil thickness: Front side and reverse side 70µm be used, 2nd & 3rd 35µm be used.
Caution1:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Caution2:
Reliability is decreased at junction temperature greater than 125C.
Recommended Operating Conditions
(Ta= -40°C to +85°C)
Parameter
Supply Voltage
Output Current
Output Voltage Range
Symbol
V
IN
I
OUT
V
RANGE
Min
7.0
0
1.0
(Note 2)
Rating
Typ
-
-
-
Max
36
3
V
IN
× 0.8
Unit
V
A
V
(Note 2) Please use it in output voltage setting of which output pulse width does not become 200nsec (Typ) or less. See the page 18 for how to calculate the
resistance of the output voltage setting.
Electrical Characteristics
(Unless otherwise specified V
IN
=24V V
EN
=3V Ta=25°C)
Parameter
Supply Current in Operating
Supply Current in Standby
Reference Voltage (T
J
=25°C)
Reference Voltage (T
J
=-40 to +150°C)
FB Input Current
Switching frequency
Maximum Duty ratio
High-side FET on-resistance
Low-side FET on-resistance
Over Current limit
UVLO detection voltage
UVLO hysteresis voltage
EN high-level input voltage
EN low-level input voltage
EN Input current
Soft Start time
●
●
V
FB
: FB Input Voltage. V
EN
: EN Input Voltage.
Pd should not be exceeded.
Symbol
I
OPR
I
STBY
V
FB
V
FB
I
FB
F
OSC
M
axduty
R
ONH
R
ONL
I
LIMIT
V
UVLO
V
UVLOHYS
V
ENH
V
ENL
I
EN
T
SS
Min
-
-
0.990
0.965
-1
255
90
-
-
-
4.7
1.2
2.5
0
2.1
1.25
Limit
Typ
2.2
0
1.000
1.000
0
300
95
90
80
5.2
5.0
1.4
-
-
4.2
2.50
Max
3.0
10
1.010
1.035
1
345
99
-
-
-
5.3
1.6
V
IN
0.8
8.4
5.00
Unit
mA
µA
V
V
µA
kHz
%
mΩ
mΩ
A
V
V
V
V
µA
msec
Conditions
V
FB
= 1.1V
No switching
V
EN
= 0V
V
FB
= 1.1V
I
SW
= 100mA
I
SW
= 100mA
V
IN
falling
V
EN
= 3V
EN rising to
FB=0.85V
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