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BU25H08-M3/P

Description
BRIDGE RECT 1P 600V 3.5A ISOCINK
Categorysemiconductor    Discrete semiconductor   
File Size108KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BU25H08-M3/P Overview

BRIDGE RECT 1P 600V 3.5A ISOCINK

BU25H08-M3/P Parametric

Parameter NameAttribute value
Diode typeSimplex
technologystandard
Voltage - Peak Reverse (Maximum)600V
Current - average rectification (Io)3.5A
Voltage at different If - Forward (Vf1.05V @ 12.5A
Current at different Vr - Reverse leakage current5µA @ 600V
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Package/casing4-SIP,BU
Supplier device packagingisoCINK+™ BU
BU25H06, BU25H08
www.vishay.com
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
FEATURES
• UL recognition file number E312394
• Thin single in-line package
• Superior thermal conductivity
• Glass passivated chip junction
+
~
~
-
-
~
~
+
Available
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
isoCink+™
Case Style BU
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
+
~
~
-
MECHANICAL DATA
Case:
BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity:
as marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 12.5 A
T
J
max.
Package
Circuit configuration
25 A
600 V, 800 V
300 A
5 μA
0.87 V
175 °C
BU
In-line
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
T
C
= 60 °C
T
A
= 25 °C
(1)
(2)
SYMBOL
V
RRM
I
O
I
FSM
I
2
t
T
J
, T
STG
BU25H06
600
25
3.5
300
373
BU25H08
800
UNIT
V
A
A
A
2
s
°C
Non-repetitive peak forward surge current, 8.3 ms single sine-wave, T
J
= 25 °C
Rating for fusing (t < 8.3 ms) T
J
= 25 °C
Operating junction and storage temperature range
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
-55 to +175
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Maximum reverse current per diode
Typical junction capacitance per diode
TEST CONDITIONS
I
F
= 12.5 A
rated V
R
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
0.97
0.87
-
120
125
MAX.
1.05
0.95
5.0
350
-
UNIT
V
μA
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 29-Aug-17
Document Number: 87650
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BU25H08-M3/P Related Products

BU25H08-M3/P BU25H06-M3/P BU25H06-E3/P
Description BRIDGE RECT 1P 600V 3.5A ISOCINK BRIDGE RECT 1P 600V 3.5A ISOCINK BRIDGE RECT 1P 600V 3.5A ISOCINK
Diode type Simplex Simplex Simplex
technology standard standard standard
Voltage - Peak Reverse (Maximum) 600V 600V 600V
Current - average rectification (Io) 3.5A 3.5A 3.5A
Voltage at different If - Forward (Vf 1.05V @ 12.5A 1.05V @ 12.5A 1.05V @ 12.5A
Current at different Vr - Reverse leakage current 5µA @ 600V 5µA @ 600V 5µA @ 600V
Operating temperature -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ) -55°C ~ 175°C(TJ)
Installation type Through hole Through hole Through hole
Package/casing 4-SIP,BU 4-SIP,BU 4-SIP,BU
Supplier device packaging isoCINK+™ BU isoCINK+™ BU isoCINK+™ BU
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