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IXFH120N25X3

Description
MOSFET N-CH 250V 120A TO247
Categorysemiconductor    Discrete semiconductor   
File Size268KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Environmental Compliance
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IXFH120N25X3 Overview

MOSFET N-CH 250V 120A TO247

IXFH120N25X3 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)250V
Current - Continuous Drain (Id) at 25°C120A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs12 milliohms @ 60A, 10V
Vgs (th) (maximum value) when different Id4.5V @ 4mA
Gate charge (Qg) at different Vgs (maximum value)122nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)7870pF @ 25V
FET function-
Power dissipation (maximum)520W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-247
Package/casingTO-247-3
Preliminary Technical Information
X3-Class HiPerFET
TM
Power MOSFET
IXFT120N25X3HV
IXFQ120N25X3
IXFH120N25X3
V
DSS
I
D25
R
DS(on)
= 250V
= 120A
12m
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV (IXFT)
G
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247 & TO-3P)
TO-268HV
TO-3P
TO-247
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
250
250
20
30
120
230
60
1.2
20
480
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
4.0
5.5
6.0
V
V
V
V
A
A
A
J
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
G
D
TO-247 (IXFH)
G
D
S
D (Tab)
TO-3P (IXFQ)
D (Tab)
S
D (Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Features
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
250
2.5
4.5
V
V
Advantages
High Power Density
Easy to Mount
Space Savings
100
nA
10
A
500
A
10
12 m
Applications
V
GS
= 10V, I
D
= 0.5
I
D25
, Note 1
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100837C(11/17)
© 2017 IXYS CORPORATION, All Rights Reserved.

IXFH120N25X3 Related Products

IXFH120N25X3 IXFT120N25X3HV IXFQ120N25X3
Description MOSFET N-CH 250V 120A TO247 250V/120A ULTRA JUNCTION X3-CLAS MOSFET N-CHANNEL 250V 120A TO3P
FET type N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 250V 250V 250V
Current - Continuous Drain (Id) at 25°C 120A(Tc) 120A(Tc) 120A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V 10V
Rds On (maximum value) when different Id, Vgs 12 milliohms @ 60A, 10V 12 milliohms @ 60A, 10V 12 milliohms @ 60A, 10V
Vgs (th) (maximum value) when different Id 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate charge (Qg) at different Vgs (maximum value) 122nC @ 10V 122nC @ 10V 122nC @ 10V
Vgs (maximum value) ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 7870pF @ 25V 7870pF @ 25V 7870pF @ 25V
Power dissipation (maximum) 520W(Tc) 520W(Tc) 520W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole surface mount Through hole
Supplier device packaging TO-247 TO-268HV TO-3P
Package/casing TO-247-3 TO-268-3, D³Pak (2 leads + tab), TO-268AA TO-3P-3,SC-65-3
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