DMN80H2D0SCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
800V
R
DS(ON)
2.0Ω@V
GS
= 10V
Package
ITO220AB
(Type TH)
I
D
T
C
= +25°
C
7A
Features
Low Input Capacitance
High BV
DSS
Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: ITO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
ITO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information
(Note 4)
Part Number
DMN80H2D0SCTI
Notes:
Case
ITO220AB (Type TH)
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
80H2D0S
YYWW
= Manufacturer’s Marking
80H2D0S = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMN80H2D0SCTI
Document number: DS39151 Rev. 2
-
2
1 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMN80H2D0SCTI
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 9), V
GS
= 10V
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) (Note 9)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)
Peak Diode Recovery dv/dt
C
Steady T
C
= +25°
State T
C
= +100°
C
L = 30mH
L = 30mH
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
E
AS
dv/dt
Value
800
±30
7
4
28
2.0
60
2.8
Unit
V
V
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
C
= +25°
C
T
C
= +100°
C
Symbol
P
D
R
θJA
R
θJC
T
J
,
T
STG
Max
41
16
49.5
3
-55 to +150
Unit
W
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
F
t
D(OFF)
t
F
t
RR
Q
RR
Min
800
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
3.3
1.4
0.86
1253
115
11
1.5
35.4
5.9
16.4
20.5
35.8
104
42.6
419
4324
Max
—
25
±100
4.0
2.0
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
Ω
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 800V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 2.5A
V
GS
= 0V, I
S
= 7.0A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= 10V, V
DS
= 560V,
I
D
= 7A
pF
Ω
nC
ns
ns
ns
ns
ns
µC
V
GS
= 10V, V
DD
= 350V,
R
G
= 25Ω, I
D
= 7A
dI/dt = 100A/µs, V
GS
= 0V,
I
F
= 7A
5. Device mounted on an infinite heatsink.
6. Guaranteed by design. Not subject to production testing.
7. I
SD
≤ 4.5A, di/dt ≤ 200A/μs, V
DD
≤ BV
DSS
, starting T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Drain current limited by maximum junction temperature.
DMN80H2D0SCTI
Document number: DS39151 Rev. 2
-
2
2 of 7
www.diodes.com
April 2017
© Diodes Incorporated
DMN80H2D0SCTI
10.0
9.0
8.0
I
D
, DRAIN CURRENT (A)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
2
20
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
30
I
D
= 2.5A
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 6.0V
I
D
, DRAIN CURRENT (A)
V
GS
= 8.0V
V
GS
= 10.0V
V
GS
= 20.0V
V
GS
= 5.0V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
150
o
C
125
o
C
85
o
C
25
o
C
-55
o
C
V
DS
= 10V
1.8
1.6
1.4
V
GS
= 10V
1.2
1
0.8
0
1
2
3
4
5
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
5
V
GS
= 10V
150
o
C
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
3
2.5
2
3
125
o
C
1.5
2
85
o
C
1
V
GS
= 10V, I
D
= 2.5A
1
25
o
C
-55
o
C
0.5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
-25
DMN80H2D0SCTI
Document number: DS39151 Rev. 2
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2
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DMN80H2D0SCTI
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
5
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
5
4.5
4
3.5
3
2.5
I
D
= 250µA
2
1.5
1
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
10000
C
T
, JUNCTION CAPACITANCE (pF)
V
GS
= 0V
I
S
, SOURCE CURRENT (A)
8
f = 1MHz
C
iss
1000
C
oss
100
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
4
3
V
GS
= 10V, I
D
= 2.5A
I
D
= 1mA
2
1
0
10
6
4
2
T
A
= 150
o
C
T
A
= 125
o
C
10
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
C
rss
0
0
1
1.5
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
P
W
=
10µs
40
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
10
8
1
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
T
J(Max)
= 150℃
T
C
= 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= 10V
P
W
= 1µs
6
V
GS
(V)
4
V
DS
= 560V, I
D
= 7A
0.1
2
0
0
5
10
20
25
30
Q
g
(nC)
Figure 11. Gate Charge
15
35
40
0.01
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
DMN80H2D0SCTI
Document number: DS39151 Rev. 2
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April 2017
© Diodes Incorporated
DMN80H2D0SCTI
1
D=0.9
D=0.7
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJC
(t) = r(t) * R
θJC
R
θJC
= 3.05℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMN80H2D0SCTI
Document number: DS39151 Rev. 2
-
2
5 of 7
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April 2017
© Diodes Incorporated
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