MMST3904
40V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
BV
CEO
> 40V
I
C
= 200mA Collector Current
Epitaxial Planar Die Construction
Ultra-Small Surface Mount Package
Complementary PNP Type: MMST3906
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
e3
Weight: 0.006 grams (Approximate)
SOT323
C
B
E
Top View
Device Symbol
Pin-out Top View
Ordering Information
(Notes 4 & 5)
Part Number
MMST3904-7-F
MMST3904Q-7-F
Notes:
Compliance
AEC-Q101
Automotive
Marking
K2N
K2N
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity Per Reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K2N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2018
Code
F
Month
Code
Jan
1
2019
G
Feb
2
2020
H
Mar
3
2021
I
Apr
4
2022
J
May
5
2023
K
Jun
6
2024
L
Jul
7
Aug
8
2025
M
Sep
9
2026
N
Oct
O
2027
O
Nov
N
2028
P
Dec
D
MMST3904
Document number: DS30082 Rev. 15 - 2
1 of 7
www.diodes.com
June 2018
© Diodes Incorporated
MMST3904
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6
200
Unit
V
V
V
mA
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°
C/W
°
C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMST3904
Document number: DS30082 Rev. 15 - 2
2 of 7
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June 2018
© Diodes Incorporated
MMST3904
Thermal Characteristics and Derating Information
400
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175
T
A
, AMBIENT TEMPERATURE (°
C)
Max Power Dissipation vs.
Ambient Temperature
200
MMST3904
Document number: DS30082 Rev. 15 - 2
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June 2018
© Diodes Incorporated
MMST3904
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 8)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
BL
Min
60
40
5
40
70
100
60
30
0.65
1
0.5
100
1
300
Max
50
50
300
0.25
0.30
0.85
0.95
4
8
10
8.0
400
40
5
35
35
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3V
V
CE
= 30V, V
EB(OFF)
= 3V
I
C
= 100µA, V
CE
= 1V
I
C
= 1mA, V
CE
= 1V
I
C
= 10mA, V
CE
= 1V
I
C
= 50mA, V
CE
= 1V
I
C
= 100mA, V
CE
= 1V
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 5V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1mA,
f = 1.0MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CC
= 5V, I
C
= 100A,
R
S
= 1kΩ, f = 1MHz
V
CC
= 3V, I
C
= 10mA,
V
BE(OFF)
= -0.5V, I
B1
= 1mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Notes:
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
t
D
t
R
V
V
pF
pF
kΩ
x 10
-4
µS
MHz
dB
ns
ns
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST3904
Document number: DS30082 Rev. 15 - 2
4 of 7
www.diodes.com
June 2018
© Diodes Incorporated
MMST3904
Typical Electrical Characteristics
10
I
C
I
B
= 10
(@T
A
= +25° unless otherwise specified.)
C,
15
f = 1MHz
1
C
OBO
, OUTPUT CAPACITANCE (pF)
C
IBO
, INPUT CAPACITANCE (pF)
V
BE(SAT)
, BASE-EMITTER (V)
SATURATION VOLTAGE
10
5
Cibo
Cobo
0.1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Typical Base-Emitter
Saturation Voltage vs. Collector Current
1,000
0
0.1
1
10
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Input and Output Capacitance vs.
Collector-Base Voltage
100
1,000
V
C E(SAT)
, COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1
I
C
I
B
= 10
T
A
= 125°
C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°
C
T
A
= +25°
C
0.1
10
V
CE
= 1.0V
1
0.1
0.01
0.1
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Typical DC Current Gain vs. Collector Current
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Typical Collector-Emitter
Saturation Voltage vs. Collector Current
1,000
MMST3904
Document number: DS30082 Rev. 15 - 2
5 of 7
www.diodes.com
June 2018
© Diodes Incorporated
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