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BF545A,215

Description
JFET N-CH 30V 6.5MA SOT23
CategoryDiscrete semiconductor    The transistor   
File Size123KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BF545A,215 Overview

JFET N-CH 30V 6.5MA SOT23

BF545A,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompliant
Samacsys DescriptionTRANSISTOR, JFET, N-CH, -30V, SOT-23; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.5mA; Power Dissipation Pd:250mW; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:SOT-23; No. of Pins:3Pins; RoHS Compliant: Yes
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
FET technologyJUNCTION
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
SO
T2
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 4 — 15 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
3
1.2 Features and benefits
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage (max. 2.2 V for BF545A).
1.3 Applications
Impedance converters in e.g. electret microphones and infra-red detectors
VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
Table 1.
V
DS
V
GSoff
I
DSS
Quick reference data
Conditions
I
D
= 1
A;
V
DS
= 15 V
V
GS
= 0 V; V
DS
= 15 V
BF545A
BF545B
BF545C
P
tot
y
fs
total power dissipation
forward transfer
admittance
T
amb
25
C
V
GS
= 0 V; V
DS
= 15 V
2
6
12
-
3
-
-
-
-
-
6.5
15
25
250
6.5
mA
mA
mA
mW
mS
Min
-
0.4
Typ
-
-
Max
30
7.8
Unit
V
V
drain-source voltage
gate-source cut-off
voltage
drain current
Symbol Parameter

BF545A,215 Related Products

BF545A,215 BF545C,215 BF545B,215 BF545AT/R BF545A-T BF545B-T BF545CT/R BF545C-T
Description JFET N-CH 30V 6.5MA SOT23 JFET N-CH 30V 25MA SOT23 JFET N-CH 30V 15MA SOT23 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
Maker NXP NXP NXP NXP NXP NXP NXP NXP
Parts packaging code TO-236 TO-236 TO-236 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to conform to conform to conform to - - conform to -
JESD-609 code e3 e3 e3 e3 - - e3 -
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED 260 - - 260 -
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Terminal surface TIN Tin (Sn) Tin (Sn) TIN - - TIN -
Maximum time at peak reflow temperature NOT SPECIFIED 40 NOT SPECIFIED 40 - - 40 -
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