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CXTA14 TR

Description
TRANS NPN DARL 30V 0.5A SOT89
Categorysemiconductor    Discrete semiconductor   
File Size351KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CXTA14 TR Overview

TRANS NPN DARL 30V 0.5A SOT89

CXTA14 TR Parametric

Parameter NameAttribute value
Transistor typeNPN - Darlington
Current - Collector (Ic) (Maximum)500mA
Voltage - collector-emitter breakdown (maximum)30V
Vce saturation value (maximum value) when different Ib,Ic1.5V @ 100µA,100mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)20000 @ 100mA,5V
Power - Max1.2W
Frequency - Transition125MHz
Operating temperature-65°C ~ 150°C(TJ)
Installation typesurface mount
Package/casingTO-243AA
Supplier device packagingSOT-89
CXTA14 NPN
CXTA64 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXTA14, CXTA64
types are complementary silicon Darlington transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
applications requiring extremely high gain.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
30
30
10
500
1.2
-65 to +150
104
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCES
VCE(SAT)
VBE(ON)
hFE
hFE
fT
TEST CONDITIONS
VCB=30V
VEB=10V
IC=100µA
IC=100mA, IB=0.1mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
10,000
20,000
125
MHz
30
1.5
2.0
MIN
MAX
100
100
UNITS
nA
nA
V
V
V
R6 (23-February 2010)
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