BLC8G20LS-310AV
Power LDMOS transistor
Rev. 5 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
310 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1900 MHz to 2000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in an asymmetrical Doherty production test circuit.
V
DS
= 28 V; I
Dq
= 650 mA (main); V
GS(amp)peak
= 0.5 V, unless otherwise specified.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
1930 to 1995
V
DS
(V)
28
P
L(AV)
(dBm)
47.5
G
p
(dB)
17
D
(%)
42.5
ACPR
(dBc)
33
[1]
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on
CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to
2000 MHz frequency range
BLC8G20LS-310AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain2 (peak)
drain1 (main)
gate1 (main)
gate2 (peak)
source
video decoupling (peak)
video decoupling (main)
1, 6
aaa-014884
Simplified outline
7
2
1
6
5
Graphic symbol
2, 7
3
3
[1]
4
5
4
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLC8G20LS-310AV
-
Description
air cavity plastic earless flanged package;
6 leads
Version
SOT1258-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS(amp)main
V
GS(amp)peak
T
stg
T
j
[1]
Parameter
drain-source voltage
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
0.5
65
[1]
Max
65
+13
+13
+150
225
Unit
V
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
V
DS
= 28 V; I
Dq
= 650 mA (main);
V
GS(amp)peak
= 0.5 V; T
case
= 80
C
P
L
= 56 W (CW)
P
L
= 89 W (CW)
0.30
0.30
K/W
K/W
Typ
Unit
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
2 of 16
BLC8G20LS-310AV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
V
(BR)DSS
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
Parameter
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1.44 mA
V
DS
= 10 V; I
D
= 144 mA
V
DS
= 28 V; I
D
= 650 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5.04 A
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 5.04 A
V
GS
= 0 V; I
D
= 2.2 mA
V
DS
= 10 V; I
D
= 220 mA
V
DS
= 28 V; I
D
= 1100 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.70 A
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 7.7 A
Min
65
1.5
1.7
-
-
-
-
-
65
1.5
1.7
-
-
-
-
-
Typ
-
1.9
2.1
-
28
-
10
100
-
1.9
2.1
-
39
-
15
70
Max
-
2.3
2.5
2.8
-
280
-
166
-
2.3
2.5
2.8
-
280
-
112
Unit
V
V
V
A
A
nA
S
m
V
V
V
A
A
nA
S
m
Main device
Peak device
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH;
f
1
= 1932.5 MHz; f
2
= 1992.5 MHz; RF performance at V
DS
= 28 V; I
Dq
= 650 mA (main); V
GS(amp)peak
= 0.5 V; T
case
= 25
C;
unless otherwise specified; in an asymmetrical Doherty production test circuit in 1930 MHz to 1995 MHz.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 56 W
P
L(AV)
= 56 W
P
L(AV)
= 56 W
P
L(AV)
= 56 W
Min
15.8
-
38
-
Typ
16.9
10
42.5
33
Max
-
6
-
28
Unit
dB
dB
%
dBc
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH;
RF performance at V
DS
= 28 V; I
Dq
= 650 mA (main); V
GS(amp)peak
= 0.5 V; T
case
= 25
C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1992.5 MHz.
Symbol
PAR
O
P
L(M)
Parameter
output peak-to-average ratio
peak output power
Conditions
P
L(AV)
= 56 W
P
L(AV)
= 56 W
Min
7.0
281
Typ
7.25
300
Max
-
-
Unit
dB
W
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
3 of 16
BLC8G20LS-310AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLC8G20LS-310AV is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA (main); V
GS(amp)peak
= 0.5 V; f = 1930 MHz. Test signal: 1-carrier WCDMA;
P
L
= 90 W (P
L(M)
=
5
dB); 100 % clipping at 0.01% probability on CCDF.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; I
Dq
= 700 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
1930
1962
1995
1930
1962
1995
[1]
[2]
Z
S
[1]
()
1.3
j3.5
1.4
j3.9
2.1
j3.9
1.3
j3.5
1.4
j3.9
2.1
j3.9
Z
L
[1]
()
1.1
j4.1
1.1
j4.1
1.3
j4.4
1.7
j2.9
1.8
j3.3
1.8
j3.9
P
L
[2]
(W)
169.8
166.3
163.9
116.0
121.2
136.0
D
[2]
(%)
55.6
56.0
57.9
66.4
65.6
64.0
G
p
[2]
(dB)
16.9
17.3
17.9
19.6
19.7
19.4
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; I
Dq
= 1200 mA (peak); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
1930
1962
1995
1930
1962
1995
[1]
[2]
Z
S
[1]
()
1.1
j3.9
1.4
j4.1
1.8
j4.5
1.1
j3.9
1.4
j4.1
1.8
j4.5
Z
L
[1]
()
1.4
j4.7
1.4
j4.8
1.4
j5.2
1.7
j2.9
1.7
j2.8
1.7
j3.3
P
L
[2]
(W)
239.9
234.3
229.3
149.8
122.0
147.6
D
[2]
(%)
53.9
53.6
50.2
64.3
61.3
62.9
G
p
[2]
(dB)
16.5
16.9
16.6
19.6
20.3
19.9
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
4 of 16
BLC8G20LS-310AV
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; I
Dq
= 700 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
1930
1962
1995
[1]
[2]
[3]
Z
S
[1]
()
0.9
j3.3
0.9
j3.6
1.3
j3.7
Z
L
[1]
()
1.3
j4.8
1.3
j4.6
1.3
j4.5
P
L
[2]
(dBm)
151.7
152.8
162.5
D
[3]
(%)
33.9
35.2
36.2
G
p
[3]
(dB)
19.8
20.2
20.6
Maximum power load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 56 W.
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; I
Dq
= 700 mA (main); V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
1930
1962
1995
[1]
[2]
[3]
Z
S
[1]
()
1.3
j3.4
1.4
j3.8
1.9
j3.9
Z
L
[1]
()
2.4
j3.5
2.6
j3.5
2.8
j3.6
P
L
[2]
(dBm)
111.2
105.7
100.2
D
[3]
(%)
49.2
50.4
50.2
G
p
[3]
(dB)
22.5
22.9
23.0
Maximum power load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
at P
L(AV)
= 56 W.
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
5 of 16
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