BC817UPN
NPN Silicon AF Transistor Array
•
For AF stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated
NPN/PNP transistors in one package
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
C1
B2
5
E2
4
Tape loading orientation
Top View
6 5 4
W1s
1 2 3
Direction of Unreeling
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
6
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
TR2
TR1
1
E1
2
B1
3
C2
EHA07177
Type
BC817UPN
Maximum Ratings
Parameter
Marking
1Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
45
50
5
500
1000
100
200
330
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
115 °C
Junction temperature
Storage temperature
mA
mW
°C
1
2011-09-15
BC817UPN
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
105
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Symbol
min.
45
50
5
Values
typ.
-
-
-
max.
-
-
-
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
µA
-
-
-
-
-
0.1
50
100
nA
-
160
100
250
-
-
-
400
-
0.7
1.2
V
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
h
FE
-
DC current gain
2)
I
C
= 100 mA,
V
CE
= 1 V
I
C
= 300 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
V
BEsat
-
-
Base emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 50 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
f
= 1 MHz,
V
BE
= 10 V
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
Pulse
f
T
C
cb
C
eb
-
-
-
170
6
60
-
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2011-09-15
BC817UPN
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 1 V
10
3
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
10
3
BC 817/818
EHP00223
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
2
h
FE
5
10
2
10
1
105 °C
85 °C
65 °C
25 °C
-40 °C
5
10
0
5
10
1 -5
10
10
-4
10
-3
10
-2
10
-1
A
10
0
10
-1
0
0.2
0.4
0.6
V
0.8
I
C
V
CEsat
Base-emitter saturation voltage
I
C
=
ƒ
(
V
BEsat
),
h
FE
= 10
10
3
BC 817/818
EHP00222
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CBO
= 25 V
10
5
BC 817/818
EHP00221
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
Ι
CBO
nA
10
4
10
2
5
10
3
10
1
5
max
10
2
typ
10
0
5
10
1
10
-1
0
1.0
2.0
3.0
V
4.0
10
0
0
50
100
˚C
T
A
150
V
BEsat
3
2011-09-15
BC817UPN
Transition frequency
f
T
=
ƒ
(
I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
f
T
MHz
5
55
50
45
40
35
30
25
20
15
10
5
CCB
CEB
BC 817/818
EHP00218
Collector-base capacitance
C
cb
=
ƒ
(
V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(
V
EB
)
65
pF
10
2
5
10
1
10
0
C
CB/
C
EB
10
1
10
2
10
3
mA
0
0
2
4
6
8
10
12
14
16
V
20
Ι
C
V
CB
/V
EB
Total power dissipation
P
tot
=
ƒ
(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
400
mW
10
3
K/W
300
10
2
250
R
thJS
10
1
P
tot
200
150
10
0
100
50
10
-1 -6
10
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0
0
20
40
60
80
100
120
°C
150
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
4
2011-09-15
BC817UPN
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ
(
t
p
)
10
3
P
totmax
/P
totDC
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
5
2011-09-15
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