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BCR148WE6327BTSA1

Description
TRANS PREBIAS NPN 250MW SOT323-3
Categorysemiconductor    Discrete semiconductor   
File Size864KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BCR148WE6327BTSA1 Overview

TRANS PREBIAS NPN 250MW SOT323-3

BCR148WE6327BTSA1 Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)70 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition100MHz
Power - Max250mW
Installation typesurface mount
Package/casingSC-70,SOT-323
Supplier device packagingPG-SOT323-3
BCR148...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit
driver circuit
Built in bias resistor (R
1
=47 kΩ,
R
2
=47 kΩ)
BCR148S: Two internally isolated
transistors with good matching
in one multichip package
BCR148S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR148
BCR148W
C
3
BCR148S
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR148
BCR148S
BCR148W
Marking
WEs
WEs
WEs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
2011-08-29
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