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BCR 189L3 E6327

Description
TRANS PREBIAS PNP 250MW TSLP-3
Categorysemiconductor    Discrete semiconductor   
File Size553KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCR 189L3 E6327 Overview

TRANS PREBIAS PNP 250MW TSLP-3

BCR 189L3 E6327 Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)120 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition200MHz
Power - Max250mW
Installation typesurface mount
Package/casingSC-101,SOT-883
Supplier device packagingPG-TSLP-3-4
BCR189...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 22 kΩ)
BCR189F/L3
BCR189T
C
3
R
1
1
B
2
E
EHA07180
Type
Marking
Pin Configuration
Package
BCR189F
BCR189L3
BCR189T
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation
BCR189F,
T
S
128°C
BCR189L3,
T
S
135°C
BCR189T,
T
S
109°C
Junction temperature
Storage temperature
W2s
W2
W2s
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSLP-3
TSLP-3-4
SC75
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
Value
50
50
5
30
100
250
250
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
Mar-03-2005

BCR 189L3 E6327 Related Products

BCR 189L3 E6327 BCR 189F E6327 BCR 189T E6327
Description TRANS PREBIAS PNP 250MW TSLP-3 TRANS PREBIAS PNP 250MW TSFP-3 TRANS PREBIAS PNP 250MW SC75
Transistor type PNP - Pre-biased PNP - Pre-biased PNP - Pre-biased
Current - Collector (Ic) (Maximum) 100mA 100mA 100mA
Voltage - collector-emitter breakdown (maximum) 50V 50V 50V
Resistor - Substrate (R1) 22 kOhms 22 kOhms 22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value) 120 @ 5mA,5V 120 @ 5mA,5V 120 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic 300mV @ 500µA,10mA 300mV @ 500µA,10mA 300mV @ 500µA,10mA
Current - collector cutoff (maximum) 100nA(ICBO) 100nA(ICBO) 100nA(ICBO)
Frequency - Transition 200MHz 200MHz 200MHz
Power - Max 250mW 250mW 250mW
Installation type surface mount surface mount surface mount
Package/casing SC-101,SOT-883 SOT-723 SC-75,SOT-416
Supplier device packaging PG-TSLP-3-4 PG-TSFP-3 PG-SC-75

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