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BSO200P03SNTMA1

Description
MOSFET P-CH 30V 7.4A 8DSO
CategoryDiscrete semiconductor    The transistor   
File Size236KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSO200P03SNTMA1 Overview

MOSFET P-CH 30V 7.4A 8DSO

BSO200P03SNTMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)7.4 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)580 pF
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSO200P03S
OptiMOS™-P
Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Avalanche rated
• dv /dt rated
• Ideal for fast switching buck converter
Product Summary
V
DS
R
DS(on),max
I
D
-30
20
-9.1
V
mΩ
A
P-DSO-8
53
Type
BSO200P03S
Package
P-DSO-8
Marking
200P3S
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
≤10
secs
Continuous drain current
I
D
T
A
=25 °C
1)
T
A
=70 °C
1)
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
2)
I
D
=-9.1 A,
R
GS
=25
-9.1
-7.3
-37
98
mJ
steady state
-7.4
-5.9
A
Unit
Reverse diode dv /dt
dv /dt
I
D
=-9.1 A,
V
DS
=20 V,
di /dt =-200 A/µs,
T
j,max
=150 °C
-6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.21
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
1)
2.36
±25
1.56
V
W
°C
-55 ... 150
55/150/56
page 1
2008-04-22
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