BSP320S E6433 datasheet, PDF - EEWORLD Datasheet

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BSP320S E6433: DescriptionMOSFET N-CH 60V 2.9A SOT-223; Categorysemiconductor Discrete semiconductor; File Size488KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSP320S E6433 Overview

MOSFET N-CH 60V 2.9A SOT-223

BSP320S E6433 Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	60V
Current - Continuous Drain (Id) at 25°C	2.9A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	120 milliohms @ 2.9A, 10V
Vgs (th) (maximum value) when different Id	4V @ 20µA
Gate charge (Qg) at different Vgs (maximum value)	12nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	340pF @ 25V
FET function	-
Power dissipation (maximum)	1.8W（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Supplier device packaging	PG-SOT223-4
Package/casing	TO-261-4，TO-261AA

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BSP320S

Pb-free lead plating; RoHS compliant

Qualified according to AEC Q101

•

Halogenfree according to IEC61249221

Tape and Reel

PG-SOT223

H6327:

1000pcs/r

PG-SOT223

H6433:

4000pcs/r

Packaging

Non dry

Rev 2.5

2012-11-28

BSP320S E6433 Related Products

	BSP320S E6433	BSP320S	BSP320S E6327	BSP320SH6327XTSA1	BSP320SH6327	BSP320SH6433
Description	MOSFET N-CH 60V 2.9A SOT-223	SIPMOS Small-Signal-Transistor	MOSFET N-CH 60V 2.9A SOT-223	Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2.9A(Tj) Gate-source threshold voltage: 4V @ 20uA Drain-source on-resistance: 120mΩ @ 2.9A, 10V Maximum power Dissipation (Ta=25°C): 1.8W Type: N-channel N-channel, 60V, 2.9A, 120mΩ@10V	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Is it Rohs certified?	-	conform to	-	conform to	conform to	conform to
package instruction	-	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	-	compli	-	compliant	compliant	compliant
ECCN code	-	EAR99	-	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	60 mJ	-	60 mJ	60 mJ	60 mJ
Configuration	-	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	60 V	-	60 V	60 V	60 V
Maximum drain current (ID)	-	2.9 A	-	2.9 A	2.9 A	2.9 A
Maximum drain-source on-resistance	-	0.12 Ω	-	0.12 Ω	0.12 Ω	0.12 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	-	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	-	1	-	1	1	1
Number of terminals	-	4	-	4	4	4
Operating mode	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	-	11.6 A	-	11.6 A	11.6 A	11.6 A
surface mount	-	YES	-	YES	YES	YES
Terminal form	-	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal location	-	DUAL	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	-	SILICON	-	SILICON	SILICON	SILICON
Base Number Matches	-	1	-	1	1	1

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