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BTS244Z E3062A

Description
MOSFET N-CH 55V 35A TO220-5
Categorysemiconductor    Discrete semiconductor   
File Size412KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BTS244Z E3062A Overview

MOSFET N-CH 55V 35A TO220-5

BTS244Z E3062A Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)55V
Current - Continuous Drain (Id) at 25°C35A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs13 milliohms @ 19A, 10V
Vgs (th) (maximum value) when different Id2V @ 130µA
Gate charge (Qg) at different Vgs (maximum value)130nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)2660pF @ 25V
FET functionTemperature detection diode
Power dissipation (maximum)170W(Tc)
Operating temperature-40°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingPG-TO220-5-62
Package/casingTO-263-5, D²Pak (4 leads + tabs), TO-263BB
Speed TEMPFET
BTS244Z
Speed TEMPFET®
®
N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
Overtemperature protection
Green Product (RoHS Compliant)
Avalanche rated
1
5
PG-TO220-5-62
PG-TO220-5-3
AEC Qualified
R
DS(on)
13 m
Package
PG-TO220-5-3
PG-TO220-5-62
PG-TO-220-5-43
D
Pin 3 and TAB
PG-TO220-5-43
Type
BTS 244 Z
V
DS
55 V
G
Pin 1
A
Pin 2
Temperature
Sensor
K
Pin 4
S
Pin 5
Pin
1
2
3
4
5
Symbol
G
A
D
K
S
Function
Gate
Anode Temperature Sensor
Drain
Cathode Temperature Sensor
Source
Data Sheet
1
Rev.1.3, 2009-12-04

BTS244Z E3062A Related Products

BTS244Z E3062A BTS244ZNKSA1 BTS244Z E3043
Description MOSFET N-CH 55V 35A TO220-5 MOSFET N-CH 55V 35A TO220-5 MOSFET N-CH 55V 35A TO220-5
FET type N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 55V 55V 55V
Current - Continuous Drain (Id) at 25°C 35A(Tc) 35A(Tc) 35A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V 4.5V,10V 4.5V,10V
Rds On (maximum value) when different Id, Vgs 13 milliohms @ 19A, 10V 13 milliohms @ 19A, 10V 13 milliohms @ 19A, 10V
Vgs (th) (maximum value) when different Id 2V @ 130µA 2V @ 130µA 2V @ 130µA
Gate charge (Qg) at different Vgs (maximum value) 130nC @ 10V 130nC @ 10V 130nC @ 10V
Vgs (maximum value) ±20V ±20V ±20V
Input capacitance (Ciss) at different Vds (maximum value) 2660pF @ 25V 2660pF @ 25V 2660pF @ 25V
FET function Temperature detection diode Temperature detection diode Temperature detection diode
Power dissipation (maximum) 170W(Tc) 170W(Tc) 170W(Tc)
Operating temperature -40°C ~ 175°C(TJ) -40°C ~ 175°C(TJ) -40°C ~ 175°C(TJ)
Installation type surface mount Through hole Through hole
Supplier device packaging PG-TO220-5-62 PG-TO220-5-3 P-TO220-5-43
Package/casing TO-263-5, D²Pak (4 leads + tabs), TO-263BB TO-220-5 formed lead TO-220-5
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