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BTS555 E3146

Description
IC SW PWR HISIDE TO-218-5-146
Categorysemiconductor    Power management   
File Size296KB,16 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BTS555 E3146 Overview

IC SW PWR HISIDE TO-218-5-146

BTS555 E3146 Parametric

Parameter NameAttribute value
Switch typeUniversal
Number of outputs1
Ratio - Input:Output1:1
Output configurationhigh-end
Output typeN channel
interfaceswitch
Voltage - Load5 V ~ 34 V
Voltage - Power Supply (Vcc/Vdd)unnecessary
Current - Output (maximum)128A
On-resistance (typ.)1.9 milliohms
input typenon-inverting
characteristic-
failsafeCurrent limit (fixed), open load detection, over-temperature, over-voltage
Operating temperature-40°C ~ 150°C(TJ)
Package/casingTO-218-5
Supplier device packagingTO-218AB/5
PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Reversave
V
bb(AZ)
62
V
ON(CL)
44
V
bb(on)
5.0 ... 34
R
ON
1
)
I
L(ISO)
I
L(SCp)
I
L :
I
IS
V
V
V
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads
2)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of
V
bb
protection
3)
Electrostatic discharge
(ESD) protection
Features
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
TO-218AB/5
2.5
mΩ
165
A
520
A
30 000
TO-218AB-5-1
5
1
Straight leads
Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
Application
Staggered leads
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
3 & Tab
R
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
bb
+ V bb
Voltage
sensor
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
OUT
1, 5
I
L
Current
Sense
Load
2
IN
ESD
Logic
I
IN
Temperature
sensor
I
IS
IS
PROFET
Load GND
V
IN
V
IS
Logic GND
4
R
IS
1
2
3)
)
)
Due to the different lead frame geometry Ron @25°C is 0.3 mΩ higher in staggered than in straight version,
and accordingly for other temperatures.
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
1 of 16
2008-June-24

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