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BUZ31 E3045A

Description
MOSFET N-CH 200V 14.5A TO263
Categorysemiconductor    Discrete semiconductor   
File Size498KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BUZ31 E3045A Overview

MOSFET N-CH 200V 14.5A TO263

BUZ31 E3045A Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)200V
Current - Continuous Drain (Id) at 25°C14.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs200 milliohms @ 9A, 5V
Vgs (th) (maximum value) when different Id4V @ 1mA
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1120pF @ 25V
FET function-
Power dissipation (maximum)95W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingD²PAK(TO-263AB)
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
SIPMOS
®
Power Transistor
BUZ 31
• N channel
• Enhancement mode
• Avalanche-rated
Normal
Level
Pin 1
Pin 2
Pin 3
G
Type
D
Pb-free
S
V
DS
I
D
R
DS(on
)
Package
BUZ 31
200 V
14.5 A
0.2
PG-TO-220-3
Yes
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
D
14.5
A
T
C
=
30
˚C
Pulsed drain current
I
Dpuls
58
T
C
= 25 ˚C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
13.5
9
mJ
I
D
= 14.5 A,
V
DD
= 50 V,
R
GS
= 25
L
= 1.42 mH,
T
j
= 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
200
V
GS
±
20
Class 1
V
P
tot
95
W
T
C
= 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
1.32
75
K/W
E
55 / 150 / 56
Rev. 2.4
Page 1
2009-04-07
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