PTFA241301E
PTFA241301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 2420 – 2480 MHz
Description
The PTFA241301E and PTFA241301F are thermally-enhanced
130-watt, internally matched
GOLDMOS
®
FETs intended for ultra-
linear applications. They are characterized for CDMA, CDMA2000,
Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to
2480 MHz. Full gold metallization ensures excellent device lifetime
and reliability.
PTFA241301E
Package H-30260-2
PTFA241301F
Package H-31260-2
Three-carrier CDMA2000 Performance
V
DD
= 28 V, I
DQ
= 1150 mA, ƒ = 2450 MHz
Features
•
•
•
Adj. Ch. Power Ratio (dBc)
Thermally-enhanced packaging, Pb-free and
RoHS-compliant
Broadband internal matching
Typical CDMA2000 performance at 2450 MHz
- Average output power = 25 W
- Linear Gain = 14 dB
- Efficiency = 25%
Typical CW performance, 2420 MHz, 28 V
- Output power at P–1dB = 140 W
- Efficiency = 50%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 130 W
(CW) output power
45
40
-40
ACP Up
ACP Low
-45
-50
-55
-60
Drain Efficiency (%)
35
30
25
20
15
10
5
•
Efficiency
ALT Up
-65
-70
-75
-80
•
•
•
36
38
40
42
44
46
48
Output Power, Avg. (dBm)
RF Characteristics
Three-carrier CDMA2000 Measurements
(not subject to production test—verified by design/characterization in
Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
= 25 W average, ƒ = 2450 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
—
—
—
Typ
14
25
–50
Max
—
—
—
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
*See Infineon distributor for future availability.
Rev. 05, 2007-05-11
PTFA241301E
PTFA241301F
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
= 130 W PEP, ƒ = 2420 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
13.0
36
—
Typ
14
38
–30
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2
—
Typ
—
—
—
0.07
2.4
—
Max
—
1.0
10.0
—
3
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 1150 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 130 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
438
2.5
–40 to +150
0.40
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTFA241301E
PTFA241301F
Package Outline
H-30260-2
H-31260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA241301E
PTFA241301F
*See Infineon distributor for future availability.
Data Sheet
2 of 12
Rev. 05, 2007-05-11
PTFA241301E
PTFA241301F
Typical Performance
(data taken in a production test fixture)
Broadband CW Performance (at P–1dB)
V
DD
= 28 V, I
DQ
= 1150 mA
Linear Broadband Performance
V
DD
= 28 V, I
DQ
= 1150 mA, P
OUT
, Avg. = 45.5 dBm
20
0
18
17
53
Output Power
52
51
Return Loss (dB)
15
Gain
-5
Gain (dB)
Gain (dB)
16
15
14
13
10
-10
Efficiency
50
49
5
Return Loss
-15
Gain
2430
2440
2450
2460
2470
48
47
2480
0
2420
2430
2440
2450
2460
2470
-20
2480
12
2420
Frequency (MHz)
Frequency (MHz)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 1150 mA,
ƒ
1
= 2449 MHz, ƒ
2
= 2450 MHz
0
-10
-20
3rd Order
14
16
15
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 1150 mA, ƒ = 2450 MHz
60
50
Gain
IMD (dBc)
-40
-50
-60
-70
-80
36
38
40
42
44
46
48
Gain (dB)
-30
40
30
5th
7th
13
12
11
10
Efficiency
20
10
0
50
52
36
38
40
42
44
46
48
50
52
Output Power, Avg. (dBm)
Output Power (dBm)
Data Sheet
3 of 12
Rev. 05, 2007-05-11
Drain Efficiency (%)
Efficiency (%), P
OUT
(dBm)
PTFA241301E
PTFA241301F
Typical Performance
(cont.)
WiMAX Performance
V
DD
= 28 V, I
DQ
= 1.2 A,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
30
-15
Efficiency
25
-20
ƒ = 2.42 GHz
ƒ = 2.48 GHz
20
-25
ƒ = 2.45 GHz
15
10
5
0
15
20
25
30
35
40
45
50
Output Power (dBm)
-30
-35
-40
-45
WiMAX Performance
V
DD
= 28 V, I
DQ
= 1.2 A, ƒ = 2480 MHz,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-15
-20
EVM (dB)
-25
t = +25 °C
-30
-35
-40
-45
15
20
25
30
35
40
45
50
Output Power (dBm)
t = +85 °C
t = –20 °C
Efficiency (%)
WiMAX Performance
V
DD
= 28 V, ƒ = 2480 MHz
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-15
-20
Output Power (dBm)
EVM (dBc)
Power Sweep, under Pulsed Conditions
V
DD
= 28 V, I
DQ
= 1.15 A, ƒ = 2420 MHz,
pulse period = 800 µs, pulse width = 80 µs,
1% duty cycle
60
58
P–6dB = 52.5 dBm
P–3dB = 52.1 dBm
P–1dB = 51.5 dBm
EVM (dB)
-25
-30
-35
-40
-45
15
20
25
I
DQ
= 0.90 A
56
54
52
50
48
46
44
Ideal
Actual
I
DQ
= 1.65 A
I
DQ
= 1.2 A
30
35
40
45
50
30
35
40
45
Output Power (dBm)
Input Power (dBm)
Data Sheet
5 of 12
Rev. 05, 2007-05-11
Test/Measurement
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