SIDC03D60F6X1SA2 datasheet, PDF

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SIDC03D60F6X1SA2: DescriptionDIODE GEN PURP 600V 6A WAFER; CategoryDiscrete semiconductor diode; File Size107KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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SIDC03D60F6X1SA2 Overview

DIODE GEN PURP 600V 6A WAFER

SIDC03D60F6X1SA2 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	DIE
package instruction	1.20 X 2.25 MM, DIE-1
Contacts	1
Reach Compliance Code	compliant
ECCN code	EAR99
application	FAST SOFT RECOVERY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-XUUC-N1
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	6 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.07 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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SIDC03D60F6

Fast switching diode

Features:

•

600V Emitter Controlled technology 70 µm

chip

•

soft , fast switching

•

low reverse recovery charge

•

small temperature coefficient

This chip is used for:

•

power modules and discrete

devices

Applications:

•

SMPS, resonant applications,

drives

Chip Type

SIDC03D60F6

600V

Die Size

1.2 x 2.25 mm

Package

sawn on foil

Mechanical Parameters

Raster size

Area total

Anode pad size

Thickness

Wafer size

Max. possible chips per wafer

Passivation frontside

Pad metal

Backside metal

Die bond

Wire bond

Reject ink dot size

Recommended storage environment

1.2 x 2.25

2.7

0.718 x 1.768

150

5650

Photoimide

3200 nm AlSiCu

Ni Ag –system

suitable for epoxy and soft solder die bonding

Electrically conductive glue or solder

Al,

≤250µm

∅

0.65mm; max 1.2mm

Store in original container, in dry nitrogen, in dark

environment, < 6 month at an ambient temperature of 23°C

µm

Edited by INFINEON Technologies, IMM PSD, L4324M, Edition 2.1, 09.03.2010

SIDC03D60F6X1SA2 Related Products

	SIDC03D60F6X1SA2	SIDC03D60F6
Description	DIODE GEN PURP 600V 6A WAFER	6 A, 600 V, SILICON, RECTIFIER DIODE
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
Parts packaging code	DIE	DIE
package instruction	1.20 X 2.25 MM, DIE-1	1.20 X 2.25 MM, DIE-1
Contacts	1	1
Reach Compliance Code	compliant	compli
ECCN code	EAR99	EAR99
application	FAST SOFT RECOVERY	FAST SOFT RECOVERY
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-XUUC-N1	R-XUUC-N1
Number of components	1	1
Phase	1	1
Number of terminals	1	1
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C
Maximum output current	6 A	6 A
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	600 V
Maximum reverse recovery time	0.07 µs	0.07 µs
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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